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2N5630

Description
Power Bipolar Transistor, 16A I(C), 120V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2
CategoryDiscrete semiconductor    The transistor   
File Size75KB,1 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

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Power Bipolar Transistor, 16A I(C), 120V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2

2N5630 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Objectid1439169668
package instructionFLANGE MOUNT, O-MBFM-P2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)16 A
Collector-emitter maximum voltage120 V
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-3
JESD-30 codeO-MBFM-P2
JESD-609 codee0
Number of terminals2
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formPIN/PEG
Terminal locationBOTTOM
Transistor component materialsSILICON

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Index Files: 1277  1832  769  1  2839  26  37  16  1  58 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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