TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
NPN POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/613
DEVICES
LEVELS
2N7373
JANSM – 3K Rads (Si)
JANSD – 10K Rads (Si)
JANSP – 30K Rads (Si)
JANSL – 50K Rads (Si)
JANSR – 100K Rads (Si)
JANSF – 300K Rads (Si)
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ T
A
= +25°C
(1)
@ T
C
= +25°C
(2)
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
T
j
, T
stg
R
θJC
Value
80
100
5.0
5.0
4.0
58
-65 to +200
3
Unit
Vdc
Vdc
Vdc
Adc
W
°C
°C/W
Operating & Storage Junction Temperature Range
Thermal Resistance, Junction-to Case
1)
2)
Derate linearly 22.8mW/°C for T
A
> 25°C
Derate linearly 331mW/°C for T
C
> 25°C
TO-254AA
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 100mAdc
Collector-Emitter Cutoff Current
V
CE
= 60Vdc, V
BE
= 0Vdc
V
CE
= 100Vdc, V
BE
= 0Vdc
Collector-Emitter Cutoff Current
V
CE
= 40Vdc, I
B
= 0
Emitter-Base Cutoff Current
V
EB
= 4.0Vdc
V
EB
= 5.5Vdc
T4-LDS-0133 Rev. 1 (091478)
V
(BR)CEO
I
CES1
I
CES2
I
CEO
I
EBO1
I
EBO2
80
Vdc
Symbol
Min.
Max.
Unit
PIN 1 = BASE
PIN 2 = COLLECTOR
PIN 3 = EMITTER
SEE FIGURE 1
1.0
1.0
µAdc
mAdc
50
1.0
1.0
µAdc
µAdc
mAdc
Page 1 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
NPN POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/613
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
(CONT.)
Parameters / Test Conditions
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
I
C
= 0.05Adc, V
CE
= 5.0Vdc
I
C
= 2.5Adc, V
CE
= 5.0Vdc
I
C
= 5.0Adc, V
CE
= 5.0Vdc
Base-Emitter Non-Saturated Voltage
V
CE
= 5.0Vdc, I
C
= 2.5Adc
Base-Emitter Saturation Voltage
I
C
= 2.5Adc, I
B
= 0.25Adc
I
C
= 5.0Adc, I
B
= 0.5Adc
Collector-Emitter Saturation Voltage
I
C
= 2.5Adc, I
B
= 0.25Adc
I
C
= 5.0Adc, I
B
= 0.5Adc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Common Emitter Small Signal, Short Circuit Forward Current Transfer Ratio
V
CE
= 5Vdc, I
C
= 100mAdc, f = 1kHz
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 0.5Adc, V
CE
= 5Vdc, f = 10MHz
Output Capacitance
V
CB
= 10Vdc, I
E
= 0, 100kHz
≤
f
≤
1.0MHz
SAFE OPERATING AREA
DC Tests
T
C
= +25°C, 1 Cycle, t = 1s
Test 1
V
CE
= 12Vdc, I
C
= 5.0Adc
Test 2
V
CE
= 32Vdc, I
C
= 1.5Adc
Test 3
V
CE
= 80Vdc, I
C
= 100mAdc
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle
≤
2.0%
T4-LDS-0133 Rev. 1 (091478)
Page 2 of 3
h
fe
50
Symbol
Min.
Max.
Unit
h
FE1
h
FE2
h
FE3
V
BE
V
BE(sat)1
V
BE(sat)2
50
70
40
---
200
---
1.45
Vdc
Symbol
Min.
Max.
Unit
1.45
2.2
Vdc
V
CE(sat)1
V
CE(sat)2
0.75
1.5
Vdc
|h
fe
|
7.0
C
obo
250
pF
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
NPN POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/613
Dimensions
Ltr
Inches
Min
BL
CH
LD
LL
LO
LS
MHD
MHO
TL
TT
TW
Term
1
Term
2
Term
3
.535
.249
.035
.510
Max
.545
.260
.045
.570
Millimeters
Min
13.59
6.32
0.89
12.95
Max
13.84
6.60
1.14
14.48
.150 BSC
.150 BSC
.139
.665
.790
.040
.535
.149
.685
.800
.050
.545
3.81 BSC
3.81 BSC
3.53
16.89
20.07
1.02
13.59
Base
3.78
17.40
20.32
1.27
13.84
Collector
Emitter
NOTES:
1. Dimensions are in inches.
* 2. Millimeters are given for general information only.
3. All terminals are isolated from case.
4. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology
FIGURE 1: PACKAGE DIMENSIONS
T4-LDS-0133 Rev. 1 (091478)
Page 3 of 3
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