MCP14E3/MCP14E4/MCP14E5
4.0A Dual High-Speed Power MOSFET Drivers With Enable
Features
• High Peak Output Current: 4.0A (typical)
• Independent Enable Function for Each Driver
Output
• Low Shoot-Through/Cross-Conduction Current in
Output Stage
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Capacitive Load Drive Capability:
- 2200 pF in 15 ns (typical)
- 5600 pF in 26 ns (typical)
• Short Delay Times: 50 ns (typical)
• Latch-Up Protected: Will Withstand 1.5A Reverse
Current
• Logic Input Will Withstand Negative Swing Up To
5V
• Space-Saving Packages:
- 8-Lead 6x5 DFN, PDIP, SOIC
General Description
The MCP14E3/MCP14E4/MCP14E5 devices are a
family of 4.0A buffers/MOSFET drivers. Dual-inverting,
dual-noninvertering, and complementary outputs are
standard logic options offered.
The MCP14E3/MCP14E4/MCP14E5 drivers are
capable of operating from a 4.5V to 18V single power
supply and can easily charge and discharge 2200 pF
gate capacitance in under 15 ns (typical). They provide
low impedance in both the ON and OFF states to
ensure the MOSFET’s intended state will not be
affected, even by large transients. The MCP14E3/
MCP14E4/MCP14E5 inputs may be driven directly
from either TTL or CMOS (2.4V to 18V).
Additional control of the MCP14E3/MCP14E4/
MCP14E5 outputs is allowed by the use of separate
enable functions. The ENB_A and ENB_B pins are
active high and are internally pulled up to V
DD
. The pins
maybe left floating for standard operation.
The MCP14E3/MCP14E4/MCP14E5 dual-output 4.0A
driver family is offered in both surface-mount and pin-
through-hole packages with a -40°C to +125°C
temperature rating. The low thermal resistance of the
thermally enhanced DFN package allows for greater
power dissipation capability for driving heavier
capacitive or resistive loads.
These devices are highly latch-up resistant under any
conditions within their power and voltage ratings. They
are not subject to damage when up to 5V of noise
spiking (of either polarity) occurs on the ground pin.
They can accept, without damage or logic upset, up to
1.5A of reverse current being forced back into their
outputs. All terminals are fully protect against
Electrostatic Discharge (ESD) up to 4 kV.
Applications
•
•
•
•
Switch Mode Power Supplies
Pulse Transformer Drive
Line Drivers
Motor and Solenoid Drive
Package Types
MCP14E4
8-Pin
MCP14E5
PDIP/SOIC MCP14E3
ENB_A
IN A
GND
IN B
1
2
3
4
8
7
6
5
8-Pin
6x5 DFN
(1)
ENB_A
IN A
GND
IN B
8
1
2
7
MCP14E4
MCP14E3
MCP14E5
ENB_B
OUT A
V
DD
OUT B
ENB_B
OUT A
V
DD
OUT B
ENB_B
OUT A
V
DD
OUT B
ENB_B
OUT A
V
DD
OUT B
ENB_B
OUT A
V
DD
OUT B
ENB_B
OUT A
V
DD
OUT B
6
Note 1:
Exposed pad of the DFN package is electrically isolated.
3
4
5
©
2008 Microchip Technology Inc.
DS22062B-page 1
MCP14E3/MCP14E4/MCP14E5
Functional Block Diagram
V
DD
Inverting
V
DD
Output
Internal
Pull-up
Non-inverting
Enable
Input
Effective
Input C = 20 pF
(Each Input)
GND
4.7 V
4.7 V
MCP14E3 Dual Inverting
MCP14E4 Dual Noninverting
MCP14E5 One Inverting, One Noninverting
DS22062B-page 2
©
2008 Microchip Technology Inc.
MCP14E3/MCP14E4/MCP14E5
1.0
ELECTRICAL
CHARACTERISTICS
†
Notice:
Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational sections of this specification is not intended.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
Absolute Maximum Ratings †
Supply Voltage ................................................................+20V
Input Voltage ............................... (V
DD
+ 0.3V) to (GND – 5V)
Enable Voltage .............................(V
DD
+ 0.3V) to (GND - 5V)
Input Current (V
IN
>V
DD
)................................................50 mA
Package Power Dissipation (T
A
= 50°C)
8L-DFN .......................................................................
Note 3
8L-PDIP ........................................................................1.10W
8L-SOIC .....................................................................665 mW
DC CHARACTERISTICS (NOTE 2)
Electrical Specifications:
Unless otherwise indicated, T
A
= +25°C, with 4.5V
≤
V
DD
≤
18V.
Parameters
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
Input Voltage
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Latch-Up Protection With-
stand Reverse Current
Switching Time (Note 1)
Rise Time
Fall Time
Propagation Delay Time
Propagation Delay Time
High-Level Input Voltage
Low-Level Input Voltage
Hysteresis
Enable Leakage Current
Propagation Delay Time
Propagation Delay Time
Note 1:
2:
3:
t
R
t
F
t
D1
t
D2
V
EN_H
V
EN_L
V
HYST
I
ENBL
t
D3
t
D4
—
—
—
—
1.60
1.30
0.10
40
—
—
15
18
46
50
1.90
2.20
0.30
85
60
50
30
30
55
55
2.90
2.40
0.60
115
—
—
ns
ns
ns
ns
V
V
V
µA
ns
ns
V
DD
= 12V,
ENB_A = ENB_B = GND
Figure 4-3
(Note 1)
Figure 4-3
(Note 1)
Figure 4-1, Figure 4-2
C
L
= 2200 pF
Figure 4-1, Figure 4-2
C
L
= 2200 pF
Figure 4-1, Figure 4-2
Figure 4-1, Figure 4-2
V
DD
= 12V, LO to HI Transition
V
DD
= 12V, HI to LO Transition
V
OH
V
OL
R
OH
R
OL
I
PK
I
REV
V
DD
– 0.025
—
—
—
—
—
—
—
2.5
2.5
4.0
>1.5
—
0.025
3.5
3.0
—
—
V
V
Ω
Ω
A
A
DC Test
DC Test
I
OUT
= 10 mA, V
DD
= 18V
I
OUT
= 10 mA, V
DD
= 18V
V
DD
=
18V
(Note 2)
Duty cycle
≤
2%, t
≤
300 µs
V
IH
V
IL
I
IN
V
IN
2.4
—
–1
-5
1.5
1.3
—
—
—
0.8
1
V
DD
+0.3
V
V
µA
V
0V
≤
V
IN
≤
V
DD
Sym
Min
Typ
Max
Units
Conditions
Enable Function (ENB_A, ENB_B)
Switching times ensured by design.
Tested during characterization, not production tested.
Package power dissipation is dependent on the copper pad area on the PCB.
©
2008 Microchip Technology Inc.
DS22062B-page 3
MCP14E3/MCP14E4/MCP14E5
DC CHARACTERISTICS (NOTE 2) (CONTINUED)
Electrical Specifications:
Unless otherwise indicated, T
A
= +25°C, with 4.5V
≤
V
DD
≤
18V.
Parameters
Power Supply
Supply Voltage
Supply Current
V
DD
I
DD
I
DD
I
DD
I
DD
I
DD
I
DD
I
DD
I
DD
Note 1:
2:
3:
4.5
—
—
—
—
—
—
—
—
—
1.60
0.60
1.20
1.20
1.40
0.55
1.00
1.00
18.0
2.00
0.90
1.40
1.40
1.80
0.75
1.20
1.20
V
mA
mA
mA
mA
mA
mA
mA
mA
V
IN_A
= 3V, V
IN_B
= 3V,
ENB_A = ENB_B = High
V
IN_A
= 0V, V
IN_B
= 0V,
ENB_A = ENB_B = High
V
IN_A
= 3V, V
IN_B
= 0V,
ENB_A = ENB_B = High
V
IN_A
= 0V, V
IN_B
= 3V,
ENB_A = ENB_B = High
V
IN_A
= 3V, V
IN_B
= 3V,
ENB_A = ENB_B = Low
V
IN_A
= 0V, V
IN_B
= 0V,
ENB_A = ENB_B = Low
V
IN_A
= 3V, V
IN_B
= 0V,
ENB_A = ENB_B = Low
V
IN_A
= 0V, V
IN_B
= 3V,
ENB_A = ENB_B = Low
Sym
Min
Typ
Max
Units
Conditions
Switching times ensured by design.
Tested during characterization, not production tested.
Package power dissipation is dependent on the copper pad area on the PCB.
DS22062B-page 4
©
2008 Microchip Technology Inc.
MCP14E3/MCP14E4/MCP14E5
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications:
Unless otherwise indicated, operating temperature range with 4.5V
≤
V
DD
≤
18V.
Parameters
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Switching Time (Note 1)
Rise Time
Fall Time
Delay Time
Delay Time
High-Level Input Voltage
Low-Level Input Voltage
Hysteresis
Enable Leakage Current
Propagation Delay Time
Propagation Delay Time
Power Supply
Supply Voltage
Supply Current
V
DD
I
DD
I
DD
I
DD
I
DD
I
DD
I
DD
I
DD
I
DD
Note 1:
4.5
—
—
—
—
—
—
—
—
—
2.0
0.8
1.5
1.5
1.8
0.6
1.1
1.1
18.0
3.0
1.1
2.0
2.0
2.8
0.8
1.8
1.8
V
mA
mA
mA
mA
mA
mA
mA
mA
V
IN_A
= 3V, V
IN_B
= 3V,
ENB_A = ENB_B = High
V
IN_A
= 0V, V
IN_B
= 0V,
ENB_A = ENB_B = High
V
IN_A
= 3V, V
IN_B
= 0V,
ENB_A = ENB_B = High
V
IN_A
= 0V, V
IN_B
= 3V,
ENB_A = ENB_B = High
V
IN_A
= 3V, V
IN_B
= 3V,
ENB_A = ENB_B = Low
V
IN_A
= 0V, V
IN_B
= 0V,
ENB_A = ENB_B = Low
V
IN_A
= 3V, V
IN_B
= 0V,
ENB_A = ENB_B = Low
V
IN_A
= 0V, V
IN_B
= 3V,
ENB_A = ENB_B = Low
t
R
t
F
t
D1
t
D2
V
EN_H
V
EN_L
V
HYST
I
ENBL
t
D3
t
D4
—
—
—
—
1.60
1.30
—
40
—
—
25
28
50
50
2.20
1.80
0.40
87
50
60
40
40
70
70
2.90
2.40
—
115
—
—
ns
ns
ns
ns
V
V
V
µA
ns
ns
V
DD
= 12V, ENB_A = ENB_B = GND
Figure 4-3
Figure 4-3
Figure 4-1, Figure 4-2
C
L
= 2200 pF
Figure 4-1, Figure 4-2
C
L
= 2200 pF
Figure 4-1, Figure 4-2
Figure 4-1, Figure 4-2
V
DD
= 12V, LO to HI Transition
V
DD
= 12V, HI to LO Transition
V
OH
V
OL
R
OH
R
OL
V
DD
– 0.025
—
—
—
—
—
3.0
3.0
—
0.025
6.0
5.0
V
V
Ω
Ω
DC TEST
DC TEST
I
OUT
= 10 mA, V
DD
= 18V
I
OUT
= 10 mA, V
DD
= 18V
V
IH
V
IL
I
IN
2.4
—
–10
—
—
—
—
0.8
+10
V
V
µA
0V
≤
V
IN
≤
V
DD
Sym
Min
Typ
Max
Units
Conditions
Enable Function (ENB_A, ENB_B)
Switching times ensured by design.
©
2008 Microchip Technology Inc.
DS22062B-page 5
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