AP2451GY-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Capable of 2.5V Gate Drive
▼
Lower on-resistance
▼
Surface Mount Package
▼
RoHS Compliant & Halogen-Free
2928-8
D2
D2
D1
D1
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-CH BV
DSS
R
DS(ON)
G2
S2
G1
S1
20V
37mΩ
5A
-20V
75mΩ
-3.7A
I
D
P-CH BV
DSS
R
DS(ON)
I
D
Description
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance,
extremely efficient and cost-effectiveness device.
The 2928-8 J-lead package provides good on-resistance
performance and space saving like TSOP-6.
D1
D2
G1
S1
G2
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
3
3
Rating
N-channel
20
±12
5
4
20
1.38
0.01
-55 to 150
-55 to 150
P-channel
-20
±12
-3.7
-3
-20
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
90
Unit
℃/W
1
201201312
Data and specifications subject to change without notice
AP2451GY-HF
N-CH Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
o
Parameter
Drain-Source Breakdown Voltage
2
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
20
-
-
-
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.02
-
-
-
-
13
-
-
-
9
1.5
4
9
10
16
5
620
120
100
1.2
Max. Units
-
-
32
37
55
1.2
-
1
10
+100
15
-
-
-
-
-
-
990
-
-
1.8
V
V/℃
mΩ
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=6A
V
GS
=4.5V, I
D
=5A
V
GS
=2.5V, I
D
=3A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
V
DS
=V
GS
, I
D
=250uA
V
DS
=5V, I
D
=5A
V
DS
=20V, V
GS
=0V
V
GS
=+12V, V
DS
=0V
I
D
=5A
V
DS
=16V
V
GS
=4.5V
V
DS
=10V
I
D
=1A
R
G
=3.3Ω,V
GS
=10V
R
D
=10Ω
V
GS
=0V
V
DS
=20V
f=1.0MHz
f=1.0MHz
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=16V, V
GS
=0V
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Test Conditions
I
S
=1.2A, V
GS
=0V
I
S
=5A, V
GS
=0V
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
20
11
Max. Units
1.2
-
-
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
2
AP2451GY-HF
P-CH Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
o
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Test Conditions
V
GS
=0V, I
D
=-250uA
V
GS
=-10V, I
D
=-4A
V
GS
=-4.5V, I
D
=-3A
V
GS
=-2.5V, I
D
=-1A
Min.
-20
-
-
-
-
-0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.01
-
-
-
-
10
-
-
-
11
2
4
10
16
26
16
740
160
130
6.6
Max.
-
-
57
75
105
-1.2
-
-1
-10
+100
18
-
-
-
-
-
-
1180
-
-
10
Unit
V
V/℃
mΩ
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=-1mA
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-5V, I
D
=-3A
V
DS
=-20V, V
GS
=0V
V
GS
=+12V, V
DS
=0V
I
D
=-3A
V
DS
=-16V
V
GS
=-4.5V
V
DS
=-10V
I
D
=-1A
R
G
=3.3Ω,V
GS
=-5V
R
D
=10Ω
V
GS
=0V
V
DS
=-20V
f=1.0MHz
f=1.0MHz
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=-16V ,V
GS
=0V
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Test Conditions
I
S
=-1.2A, V
GS
=0V
I
S
=3A, V
GS
=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
29
20
Max.
-1.2
-
-
Unit
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board , t <5sec ; 155℃/W at steady state.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP2451GY-HF
N-Channel
20
20
T
A
=25 C
16
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
5.0 V
4.5 V
3.5 V
2.5 V
T
A
= 150
o
C
16
5.0 V
4.5 V
3.5 V
2.5 V
12
12
8
8
4
4
V
G
= 1.5 V
V
G
= 1.5 V
0
0
1
2
3
0
0
1
2
3
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
45
1.8
40
I
D
=3A
Normalized R
DS(ON)
T
A
=25
o
C
1.4
I
D
=5A
V
G
=4.5V
R
DS(ON)
(m
Ω
)
35
1.0
30
25
2
4
6
8
10
0.6
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
5
4
Normalized V
GS(th)
1.1
3
I
S
(A)
T
j
=150
o
C
2
T
j
=25
o
C
0.7
1
0
0
0.2
0.4
0.6
0.8
1
1.2
0.3
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
,Junction Temperature (
o
C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP2451GY-HF
N-Channel
f=1.0MHz
10
1000
V
GS
, Gate to Source Voltage (V)
8
I
D
=5A
V
DS
= 16 V
C
iss
6
C (pF)
100
C
oss
C
rss
4
2
0
0
4
8
12
16
20
10
1
5
9
13
17
21
25
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
Normalized Thermal Response (R
thja
)
0.2
10
100us
1ms
I
D
(A)
1
0.1
0.1
0.05
0.02
0.01
10ms
0.1
P
DM
Single Pulse
0.01
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=155
o
C/W
T
A
=25 C
Single Pulse
0.01
0.1
1
10
o
100ms
1s
DC
100
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
V
DS
=5V
V
G
T
j
=25
o
C
T
j
=150
o
C
I
D
, Drain Current (A)
Q
G
4.5V
Q
GS
Q
GD
20
10
Charge
0
0
2
4
6
Q
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
5
Embedded System
京公网安备 11010802033920号
EEWORLD
