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BZW04-102

Description
400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-41
CategoryDiscrete semiconductor    diode   
File Size49KB,4 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
Download Datasheet Parametric View All

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BZW04-102 Overview

400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-41

BZW04-102 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
Reach Compliance Codecompli
ECCN codeEAR99
Breakdown voltage nominal value120 V
Maximum clamping voltage165 V
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
polarityUNIDIRECTIONAL
Maximum repetitive peak reverse voltage102 V
surface mountNO
BZW04 SERIES
V
BR
: 6.8 - 440 Volts
P
PK
: 400 Watts
FEATURES :
* 400W surge capability at 1ms
* Excellent clamping capability
* Low zener impedance
* Fast response time : typically less
then 1.0 ps from 0 volt to V
BR(min)
* Typical I
R
less then 1µA above 10V
TRANSIENT VOLTAGE
SUPPRESSOR
DO - 41
1.00 (25.4)
MIN.
0.107 (2.74)
0.080 (2.03)
0.205 (5.20)
0.160 (4.10)
MECHANICAL DATA
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
method 208 guaranteed
* Polarity : Color band denotes cathode end except Bipolar.
* Mounting position : Any
* Weight : 0.339 gram
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
Dimensions in inches and (millimeters)
DEVICES FOR BIPOLAR APPLICATIONS
For bi-directional use B Suffix.
Electrical characteristics apply in both directions
MAXIMUM RATINGS
Rating at 25
°
C ambient temperature unless otherwise specified.
Rating
Peak Power Dissipation at Ta = 25
°
C, Tp=1ms
(Note1)
Steady State Power Dissipation at T
L
= 75
°
C
Lead Lengths 0.375", (9.5mm)
(Note 2)
Peak Forward Surge Current, 8.3ms Single Half
Sine-Wave Superimposed on Rated Load
(JEDEC Method)
(Note 3)
Operating and Storage Temperature Range
Note :
Symbol
P
PK
Value
Minimum 400
Unit
Watts
P
D
1.0
Watt
I
FSM
T
J,
T
STG
40
- 65 to + 175
Amps.
°
C
(1 ) Non-repetitive Current pulse, per Fig. 5 and derated above Ta = 25
°
C per Fig. 1
(2) Mounted on Copper Leaf area of 1.57 in
2
(40mm
2
).
(3) 8.3 ms single half sine-wave, duty cycle = 4 pulses per minutes maximum.
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