PESD24VS1UA
Unidirectional ESD protection diode
Rev. 1 — 7 March 2011
Product data sheet
1. Product profile
1.1 General description
Unidirectional ElectroStatic Discharge (ESD) protection diode in a SOD323 (SC-76) very
small Surface-Mounted Device (SMD) plastic package designed to protect one signal line
from the damage caused by ESD and other transients.
1.2 Features and benefits
Unidirectional ESD protection of one line
Max. peak pulse power: P
PP
= 160 W
Ultra low leakage current: I
RM
< 1 nA
ESD protection up to 23 kV
IEC 61000-4-2, level 4 (ESD)
IEC 61000-4-5 (surge); I
PP
= 3 A
1.3 Applications
Computers and peripherals
Communication systems
Audio and video equipment
Data lines
Controller Area Network (CAN) bus protection
1.4 Quick reference data
Table 1.
Symbol
V
RWM
C
d
Quick reference data
Parameter
reverse standoff voltage
diode capacitance
V
R
= 0 V; f = 1 MHz
Conditions
Min
-
-
Typ
-
23
Max
24
50
Unit
V
pF
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
1
2
Graphic symbol
1
2
006aaa152
NXP Semiconductors
PESD24VS1UA
Unidirectional ESD protection diode
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Package
Name
PESD24VS1UA
SC-76
Description
plastic surface-mounted package; 2 leads
Version
SOD323
Type number
4. Marking
Table 4.
Marking codes
Marking code
2E
Type number
PESD24VS1UA
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
PP
I
PP
T
j
T
amb
T
stg
[1]
Parameter
peak pulse power
peak pulse current
junction temperature
ambient temperature
storage temperature
Conditions
t
p
= 8/20
μs
t
p
= 8/20
μs
[1]
[1]
Min
-
-
-
−65
−65
Max
160
3
150
+150
+150
Unit
W
A
°C
°C
°C
Non-repetitive current pulse 8/20
μs
exponential decay waveform according to IEC 61000-4-5.
PESD24VS1UA
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 7 March 2011
2 of 13
NXP Semiconductors
PESD24VS1UA
Unidirectional ESD protection diode
Table 6.
ESD maximum ratings
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
ESD
Parameter
electrostatic discharge
voltage
Conditions
IEC 61000-4-2
(contact discharge)
MIL-STD-883
(human body model)
[1]
Device stressed with ten non-repetitive ESD pulses.
[1]
Min
-
-
Max
23
10
Unit
kV
kV
Table 7.
Standard
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
001aaa631
120
I
PP
(%)
80
100 % I
PP
; 8
μs
001aaa630
I
PP
100 %
90 %
e
−t
50 % I
PP
; 20
μs
40
10 %
t
r
=
0.7 ns to 1 ns
0
10
20
30
t (μs)
40
30 ns
60 ns
t
0
Fig 1.
8/20
μs
pulse waveform according to
IEC 61000-4-5
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
PESD24VS1UA
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 7 March 2011
3 of 13
NXP Semiconductors
PESD24VS1UA
Unidirectional ESD protection diode
6. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
RWM
I
RM
V
BR
C
d
V
CL
Parameter
reverse standoff
voltage
reverse leakage
current
breakdown voltage
diode capacitance
clamping voltage
I
PP
= 1 A
I
PP
= 3 A
r
dyn
[1]
[2]
[3]
Conditions
Min
-
Typ
-
<1
27.0
23
-
-
1.53
Max
24
50
27.5
50
36
70
-
Unit
V
nA
V
pF
V
V
Ω
V
RWM
= 24 V
I
R
= 5 mA
f = 1 MHz; V
R
= 0 V
[1][2]
-
26.5
-
-
-
[2][3]
dynamic resistance
I
R
= 10 A
-
Non-repetitive current pulse 8/20
μs
exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1 to pin 2.
Non-repetitive current pulse, Transmission Line Pulse (TLP) t
p
= 100 ns; square pulse;
ANS/IESD STM5-1-2008.
10
4
P
pp
(W)
10
3
006aac519
1.2
P
PP
P
PP(25°C)
0.8
001aaa193
10
2
0.4
10
1
10
10
2
10
3
t
p
(μs)
10
4
0
0
50
100
150
T
j
(°C)
200
T
amb
= 25
°C
Fig 3.
Peak pulse power dissipation as a function of
pulse time; typical values
Fig 4.
Relative variation of peak pulse power as a
function of junction temperature; typical
values
PESD24VS1UA
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 7 March 2011
4 of 13
NXP Semiconductors
PESD24VS1UA
Unidirectional ESD protection diode
50
C
d
(pF)
40
006aac520
10
006aac521
I
R
I
R(25°C)
30
1
20
10
0
0
5
10
15
20
V
R
(V)
25
10
–1
–100
–50
0
50
100
T
j
(°C)
150
f = 1 MHz; T
amb
= 25
°C
V
RWM
= 24 V
Fig 5.
Diode capacitance as a function of reverse
voltage; typical values
Fig 6.
Relative variation of reverse leakage current
as a function of junction temperature; typical
values
I
−V
CL
−V
BR
−V
RWM
−I
RM
−I
R
−
P-N
V
+
−I
PP
006aaa407
Fig 7.
V-I characteristics for a unidirectional ESD protection diode
PESD24VS1UA
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 7 March 2011
5 of 13
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