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BZW04-213B

Description
400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-41
CategoryDiscrete semiconductor    diode   
File Size120KB,6 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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BZW04-213B Overview

400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-41

BZW04-213B Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeDO-15
package instructionPLASTIC PACKAGE-2
Contacts2
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresUL RECOGNIZED
Minimum breakdown voltage237 V
Breakdown voltage nominal value250 V
Shell connectionISOLATED
Maximum clamping voltage442 V
ConfigurationSINGLE
Minimum diode capacitance50 pF
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-15
JESD-30 codeO-PALF-W2
JESD-609 codee3
Maximum non-repetitive peak reverse power dissipation400 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityBIDIRECTIONAL
Maximum power dissipation1.7 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage213 V
Maximum reverse current5 µA
surface mountNO
technologyAVALANCHE
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
®
BZW04-5V8/376
BZW04-5V8B/376B
TRANSIL
TM
FEATURES
s
s
s
s
s
s
PEAK PULSE POWER : 400 W (10/1000µs)
STAND-OFF VOLTAGE RANGE :
From 5.8V to 376 V
UNI AND BIDIRECTIONAL TYPES
LOW CLAMPING FACTOR
FAST RESPONSE TIME
UL RECOGNIZED
DESCRIPTION
Transil diodes provide high overvoltage protection
by clamping action. Their instantaneous response
to transient overvoltages makes them particu-
larly suited to protect voltage sensitive devices
such as MOS Technology and low voltage sup-
plied IC’s.
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25°C)
Symbol
P
PP
P
I
FSM
Parameter
Peak pulse power dissipation (see note 1)
Power dissipation on infinite heatsink
Non repetitive surge peak forward current
for unidirectional types
Storage temperature range
Maximum junction temperature
Maximum lead temperature for soldering during 10s a 5mm
from case.
Tj initial = Tamb
T
amb
= 75°C
tp = 10ms
Tj initial = T
amb
Value
400
1.7
30
Unit
W
W
A
DO-15
T
stg
T
j
T
L
- 65 to + 175
175
230
°C
°C
°C
Note 1
: For a surge greater than the maximum values, the diode will fail in short-circuit.
THERMAL RESISTANCES
Symbol
R
th (j-l)
R
th (j-a)
Junction to leads
Junction to ambient on printed circuit.
L
lead
= 10 mm
Parameter
Value
60
100
Unit
°C/W
°C/W
February 2003- Ed : 3A
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