AP4455GEH-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Lower On-resistance
▼
Fast Switching Characteristic
▼
RoHS Compliant & Halogen-Free
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
G
S
BV
DSS
R
DS(ON)
I
D
-30V
21m
-35A
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
G
D
S
TO-252(H)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
P
D
@T
A
=25℃
E
AS
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy
4
Storage Temperature Range
Operating Junction Temperature Range
Rating
-30
+25
-35
-22
-120
39
2
50
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W
mJ
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value
3.2
62.5
Units
℃/W
℃/W
1
201107254
Data and specifications subject to change without notice
AP4455GEH-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=-250uA
V
GS
=-10V, I
D
=-24A
V
GS
=-4.5V, I
D
=-18A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-18A
V
DS
=-24V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=-18A
V
DS
=-24V
V
GS
=-4.5V
V
DS
=-15V
I
D
=-18A
R
G
=3.3Ω
V
GS
=-10V
V
GS
=0V
V
DS
=-25V
f=1.0MHz
f=1.0MHz
Min.
-30
-
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
33
-
-
19
5
11.5
8.5
50
38
90
230
205
7
Max. Units
-
21
36
-3
-
-10
+30
30
-
-
-
-
-
-
-
-
14
V
mΩ
mΩ
V
S
uA
uA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
1430 2300
Source-Drain Diode
Symbol
V
SD
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=-24A, V
GS
=0V
I
S
=-10A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
26
17
Max. Units
-1.2
-
-
V
ns
nC
t
rr
Q
rr
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board
4.Starting T
j
=25
o
C, V
DD
=-20V, L=1mH, R
G
=25Ω, I
AS
=-10A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4455GEH-HF
100
80
T
C
= 25 C
80
o
-I
D
, Drain Current (A)
-I
D
, Drain Current (A)
-10V
-7.0V
-6.0V
-5.0V
V
G
= - 4.0V
T
C
= 150
o
C
60
-10V
-7.0V
-6.0V
-5.0V
V
G
= - 4.0V
60
40
40
20
20
0
0
2
4
6
8
0
0
2
4
6
8
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
30
1.8
I
D
= - 18 A
T
C
=25
℃
26
I
D
= -24 A
V
G
=-10V
Normalized R
DS(ON)
R
DS(ON)
(m
Ω
)
1.4
22
18
1.0
14
10
0.6
2
4
6
8
10
25
50
75
100
125
150
-V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
20
I
D
= -250uA
T
j
=150 C
-I
S
(A)
o
T
j
=25 C
o
Normalized -V
GS(th)
(V)
15
1.2
10
0.8
5
0.4
0
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
-V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6.6. Gate Threshold Voltage v.s.
Fig On-Resistance vs.
Junction Temperature
3
AP4455GEH-HF
f=1.0MHz
10
2000
-V
GS
, Gate to Source Voltage (V)
I
D
= - 18 A
V
DS
= - 24 V
8
1600
6
C (pF)
C
iss
1200
4
800
2
400
C
oss
C
rss
0
0
10
20
30
40
0
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (R
thjc
)
DUTY=0.
0.2
100
-I
D
(A)
Operation in this
area limited by
R
DS(ON)
0.1
100us
10
0.1
0.0
P
DM
0.0
t
T
1ms
T
c
=25 C
Single Pulse
1
0.1
1
10
o
10ms
100ms
DC
100
0.0
1
SINGLE PULSE
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
40
V
G
-I
D
, Drain Current (A)
30
Q
G
-4.5V
Q
GD
20
Q
GS
10
Charge
0
25
50
75
100
125
150
Q
T
C
, Case Temperature ( C )
o
Fig 11. Maximum Continuous Drain Current
v.s. Case Temperature
Fig 12. Gate Charge Waveform
4
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