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RN1962

Description
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
CategoryDiscrete semiconductor    The transistor   
File Size261KB,7 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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RN1962 Overview

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1962 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerToshiba Semiconductor
package instruction2-2J1B, US6, 6 PIN
Contacts6
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresBUILT-IN RESISTOR RATIO IS 1
Maximum collector current (IC)0.1 A
Collector-based maximum capacity6 pF
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)50
JESD-30 codeR-PDSO-G6
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
VCEsat-Max0.3 V
RN1961~RN1966
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1961,RN1962,RN1963
RN1964,RN1965,RN1966
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l
Including two devices in US6 (ultra super mini type 6 leads)
l
With built-in bias resistors
l
Simplify circuit design
l
Reduce a quantity of parts and manufacturing process
·
Complementary to RN2961~RN2966
Unit: mm
Equivalent Circuit and Bias Resistor Values
Type No.
RN1961
RN1962
RN1963
RN1964
RN1965
RN1966
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
JEDEC
EIAJ
TOSHIBA
Weight: 6.8mg
2-2J1B
Equivalent Circuit
(Top View)
Maximum Ratings
(Ta = 25°C) (Q1, Q2 Common)
°
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1961~1966
RN1961~1966
RN1961~1964
RN1965, 1966
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
*
T
j
T
stg
Rating
50
50
10
5
100
200
150
−55~150
Unit
V
V
V
mA
mW
°C
°C
*:
Total rating
1
2001-06-07

RN1962 Related Products

RN1962 RN1966 RN1965 RN1964 RN1963 RN1961
Description TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
Is it lead-free? Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? conform to incompatible conform to conform to conform to conform to
package instruction 2-2J1B, US6, 6 PIN 2-2J1B, US6, 6 PIN 2-2J1B, US6, 6 PIN 2-2J1B, US6, 6 PIN 2-2J1B, US6, 6 PIN 2-2J1B, US6, 6 PIN
Contacts 6 6 6 6 6 6
Reach Compliance Code unknow unknow unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features BUILT-IN RESISTOR RATIO IS 1 BUILT-IN RESISTOR RATIO IS 10 BUILT-IN RESISTOR RATIO IS 21.36 BUILT-IN RESISTOR RATIO IS 1 BUILT-IN RESISTOR RATIO IS 1 BUILT-IN RESISTOR RATIO IS 1
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Collector-based maximum capacity 6 pF 6 pF 6 pF 6 pF 6 pF 6 pF
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 50 80 80 80 70 30
JESD-30 code R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6
Number of components 2 2 2 2 2 2
Number of terminals 6 6 6 6 6 6
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED 240 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz
VCEsat-Max 0.3 V 0.3 V 0.3 V 0.3 V 0.3 V 0.3 V
Base Number Matches - 1 1 1 - 1

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