BZW06
Transil™
Datasheet - production data
Description
Transil diodes provide high overvoltage
protection by clamping action.
Their instantaneous response to transient
overvoltages makes them particularly suited to
protect voltage sensitive devices such as MOS
technology and low voltage supplied IC’s.
Table 1: Order codes
Part number
Marking
See
Table 4.
Features
600 W peak pulse power (10/1000 µs)
Stand-off voltage range 5.8 to 376 V
Unidirectional and bidirectional types
Low clamping factor
Fast response time
UL recognized, file: E136224
BZW06-xxxx
April 2017
DocID2972 Rev 4
1/9
www.st.com
This is information on a product in full production.
Characteristics
BZW06
1
Characteristics
Table 2: Absolute maximum ratings (T
amb
= 25 °C)
Symbol
P
pp
P
I
FSM
T
stg
T
j
T
L
Peak pulse power
Power dissipation on infinite heatsink
Non repetitive surge peak forward current
Storage junction temperature range
Operating junction temperature range
Maximum temperature for soldering during 10 s at 5 mm from case
Figure 1: Electrical characteristics (definitions)
Parameter
T
j
initial = T
amb
T
amb
= 75 °C
t
p
= 10 ms
T
j
initial = T
amb
Value
600
W
1.7
100
-65 to +175
-55 to +175
260
°C
A
Unit
Table 3: Thermal resistances
Symbol
R
th(j-l)
R
th(j-a)
Junction to leads
Junction to ambient on printed circuit. L
lead
= 10 mm
Parameter
Value
60
°C/W
100
Unit
2/9
DocID2972 Rev 4
BZW06
Table 4: Electrical characteristics (T
amb
= 25 °C)
I
RM
at V
RM
(1)
Types (marking)
Max.
Unidirectional
BZW06-5V8
BZW06-6V4
BZW06-8V5
BZW06-10
BZW06-13
BZW06-15
BZW06-19
BZW06-20
BZW06-23
BZW06-26
BZW06-28
BZW06-31
BZW06-33
BZW06-37
BZW06-40
BZW06-48
BZW06-58
BZW06-70
BZW06-85
BZW06-102
BZW06-128
BZW06-154
BZW06-171
BZW06-188
BZW06-213
BZW06-256
BZW06-273
BZW06-299
BZW06-342
BZW06-376
Notes:
(1)
For
Characteristics
V
BR
at I
R
(2)
Min.
V
5.8
6.4
8.5
10
13
15
19
20
23
26
28
31
33
36.8
40
48
58
70
85
102
128
154
171
188
213
256
273
299
342
376
V
6.45
7.13
9.5
11.4
14.3
17.1
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
44.7
53.2
64.6
77.9
95.0
114
143
171
190
209
237
285
304
332
380
418
mA
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
CL
at I
PP
Max.
10/1000 µs
10.5
11.3
14.5
16.7
21.2
25.2
30.6
33.2
37.5
41.5
45.7
49.9
53.9
59.3
64.8
77.0
92.0
113
137
165
207
246
274
328
344
414
438
482
548
603
57.0
53.0
41
36.0
28.0
24.0
19.6
18.0
16.0
14.5
13.1
12.0
11.1
10.1
9.3
7.8
6.5
5.3
4.4
3.6
2.9
2.4
2.2
1.85
1.75
1.45
1.40
1.25
1.1
1
V
CL
at I
PP
Max.
8/20 µs
13.4
14.5
18.6
21.7
27.2
32.5
39.3
42.8
48.3
53.5
59
64.3
69.7
76
84
100
121
146
178
212
265
317
353
388
442
529
564
618
706
776
298
276
215
184
147
123
102
93
83
75
68
62
57
53
48
40
33
27.0
22.5
19.0
15.0
12.6
11.3
10.3
9.0
7.6
7.1
6.5
5.7
5.7
αT
(3)
Max.
10
-4
/°C
5.7
6.1
7.3
7.8
8.4
8.8
9.2
9.4
9.6
9.7
9.8
9.9
10.0
10.1
10.1
10.3
10.4
10.5
10.6
10.7
10.8
10.8
10.8
10.8
11.0
11.0
11.0
11.0
11.0
11.0
C
(4)
Typ.
pF
4000
3700
2800
2300
1900
1600
1350
1250
1150
1075
1000
950
900
850
800
700
625
550
500
450
400
360
350
330
310
290
280
271
360
350
Bidirectional
BZW06-5V8B
BZW06-6V4B
BZW06-8V5B
BZW06-10B
BZW06-13B
BZW06-15B
BZW06-19B
BZW06-20B
BZW06-23B
BZW06-26B
BZW06-28B
BZW06-31B
BZW06-33B
BZW06-37B
BZW06-40B
BZW06-48B
BZW06-58B
BZW06-70B
BZW06-85B
BZW06-102B
BZW06-128B
BZW06-154B
BZW06-171B
BZW06-188B
BZW06-213B
BZW06-256B
BZW06-273B
BZW06-299B
BZW06-342B
BZW06-376B
µA
20
10
1
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
bidirectional types having V
RM
≤ 10 V, I
RM
is multiplied by 2
test : t
p
< 50 ms
(2)
Pulse
(3)
To
(4)
V
calculate V
BR
or V
CL
versus junction temperature, use the following formulas:
V
BR
at T
j
= V
BR
at 25 °C x (1 + αT x (T
j
- 25))
or
V
CL
at T
j
= V
CL
at 25 °C x (1 + αT x (T
j
- 25))
R
= 0 V, F = 1 MHz. For bidirectional types, capacitance value is divided by 2
DocID2972 Rev 4
3/9
Characteristics
BZW06
1.1
Characteristics (curves)
Figure 2: Pulse waveform (10/1000 μs)
% Ipp
100
10 µs
Pulse waveform 10/1000 µs
50
0
1000 µs
t
Figure 3: Peak pulse power dissipation versus
initial junction temperature
700
600
500
Figure 4: Peak pulse power versus exponential
pulse duration
100.0
PPP(W)
10/1000 µs
PPP(kW)
T
j
initial = 25 °C
10.0
400
300
200
100
0
0
25
50
75
100
125
150
175
200
1.0
T
j
(°C)
t
P
(ms)
0.1
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
Figure 5: Clamping voltage versus peak pulse
current (maximum values).
1000.0
Figure 6: Junction capacitance versus reverse
applied voltage (unidirectional types)
C(pF)
10000
F = 1 MHz
V
osc
= 30 mV
RMS
T
j
= 25 °C
BZW06-5V8
IPP(A)
T
j
initial = 25 °C
8/20 µs
10/1000 µs
100.0
10 ms
1000
BZW06-13
10.0
BZW06-58
100
BZW06-5V8
BZW06-376
BZW06-188
BZW06-10
BZW06-19
BZW06-33
BZW06-58
BZW06-85
1.0
BZW06-171
0.1
1
10
100
V
CL
(V)
1000
V
R
(V)
10
1
10
100
1000
4/9
DocID2972 Rev 4
BZW06
Figure 7: Junction capacitance versus reverse
applied voltage (bidirectional types)
10000
Characteristics
Figure 8: Peak forward voltage drop versus peak
forward current
1.0E+02
F = 1 MHz
V
osc
= 30 mV
RMS
T
j
= 25 °C
C(pF)
IFM(A)
BZW06-5V8B
1.0E+01
1000
BZW06-13B
T
j
= 125 °C
T
j
= 25 °C
1.0E+00
BZW06-58B
100
BZW06-171B
1.0E-01
V
FM
(V)
1000
V
R
(V)
10
1
10
100
1.0E-02
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Figure 9: Relative variation of thermal impedance
junction to ambient versus pulse duration
(printed circuit board FR4, e
CU
= 35 µm)
1.0E+00
Figure 10: Leakage current versus junction
temperature
1.E+04
Zth(j-a) /Rth(j-a)
Recommended pad layout
IR(nA)
1.E+03
1.0E-01
1.E+02
V
R
= V
RM
V
BR
< 10 V
1.E+01
1.0E-02
1.E+00
V
R
= V
RM
V
BR
> 10 V
t
P
(s)
1.0E-03
1.0E-02
1.E-01
T
j
(°C)
25
50
75
100
125
150
175
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
DocID2972 Rev 4
5/9
Embedded System
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