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BSS123L99Z

Description
TRANSISTOR 170 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size166KB,5 Pages
ManufacturerNational Semiconductor(TI )
Websitehttp://www.ti.com
Stay tuned Parametric

BSS123L99Z Overview

TRANSISTOR 170 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpose Small Signal

BSS123L99Z Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
Other featuresLOGIC LEVEL COMPATIBLE
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)0.17 A
Maximum drain-source on-resistance10 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)6 pF
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
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