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RM100DZ-2H

Description
100 A, 1600 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size44KB,3 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Environmental Compliance
Download Datasheet Parametric Compare View All

RM100DZ-2H Overview

100 A, 1600 V, SILICON, RECTIFIER DIODE

RM100DZ-2H Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMitsubishi
package instructionR-PUFM-X3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresUL RECOGNIZED
applicationHIGH VOLTAGE MEDIUM POWER
Shell connectionISOLATED
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.35 V
JESD-30 codeR-PUFM-X3
Maximum non-repetitive peak forward current2000 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current100 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1600 V
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
MITSUBISHI DIODE MODULES
RM100DZ/CZ-24,-2H
HIGH VOLTAGE MEDIUM POWER GENERAL USE
INSULATED TYPE
RM100DZ/CZ-24,-2H
I
F(AV)
V
RRM
Average forward current ..........
100A
Repetitive peak reverse voltage
..............1200/1600V
DOUBLE ARMS
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
AC motor controllers, DC motor controllers, Battery DC power supplies,
DC power supplies for control panels, and other general DC power equipment
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
93.5
80
2–φ6.5
(DZ)
12.5
26
A
1
K
2
SR
1
K
1
SR
2
A
2
16.5
23
23
3–M5
(CZ)
A
1
SR
1
K
1
K
2
SR
2
A
2
6.5
LABEL
21
30
Feb.1999

RM100DZ-2H Related Products

RM100DZ-2H RM100DZ-24 RM100CZ-24 RM100CZ-2H
Description 100 A, 1600 V, SILICON, RECTIFIER DIODE 100 A, 1200 V, SILICON, RECTIFIER DIODE 100 A, 1200 V, SILICON, RECTIFIER DIODE 100 A, 1600 V, SILICON, RECTIFIER DIODE
Is it lead-free? Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to
Maker Mitsubishi Mitsubishi Mitsubishi Mitsubishi
package instruction R-PUFM-X3 R-PUFM-X3 R-PUFM-X3 R-PUFM-X3
Reach Compliance Code unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99
Other features UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED
application HIGH VOLTAGE MEDIUM POWER HIGH VOLTAGE MEDIUM POWER HIGH VOLTAGE MEDIUM POWER HIGH VOLTAGE MEDIUM POWER
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.35 V 1.35 V 1.35 V 1.35 V
JESD-30 code R-PUFM-X3 R-PUFM-X3 R-PUFM-X3 R-PUFM-X3
Maximum non-repetitive peak forward current 2000 A 2000 A 2000 A 2000 A
Number of components 2 2 2 2
Phase 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C
Maximum output current 100 A 100 A 100 A 100 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) 260 260 260 260
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 1600 V 1200 V 1200 V 1600 V
surface mount NO NO NO NO
Terminal form UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER UPPER UPPER
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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