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BS170/E6

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size252KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

BS170/E6 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

BS170/E6 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay
package instruction,
Reach Compliance Codeunknow
ConfigurationSingle
Maximum drain current (Abs) (ID)0.3 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.83 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1
BS170
DMOS Transistor (N-Channel)
TO-226AA (TO-92)
0.181 (4.6)
min. 0.492 (12.5) 0.181 (4.6)
0.142 (3.6)
Features
High input impedance
High-speed switching
No minority carrier storage time
CMOS logic compatible input
No thermal runaway
No secondary breakdown
On special request, this transistor is also
manufactured in the pin configuration TO-18.
max.
0.022 (0.55)
0.098 (2.5)
Dimensions in inches
and (millimeters)
Mechanical Data
Case:
TO-92 Plastic Package
Weight:
approx. 0.18g
Packaging Codes/Options:
E6/Bulk- 5K per container, 20K/box
E7/4K per Ammo tape, 20K/box
Bottom
View
Maximum Ratings and Thermal Characteristics
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source-Voltage (pulsed)
Drain Current (continuous)
Power Dissipation at T
amb
= 25°C
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage Temperature Range
Symbol
V
DSS
V
DGS
V
GS
I
D
P
tot
R
θJA
T
j
T
S
(T
A
= 25°C unless otherwise noted)
Limit
60
60
±
20
Unit
V
V
V
mA
W
°C/W
°C
°C
300
0.83
(1)
150
(1)
150
–65 to +150
Note:
(1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case.
4/25/01

BS170/E6 Related Products

BS170/E6 BS170/E7
Description Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Is it Rohs certified? incompatible incompatible
Maker Vishay Vishay
Reach Compliance Code unknow unknow
Configuration Single Single
Maximum drain current (Abs) (ID) 0.3 A 0.3 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 code e0 e0
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 0.83 W 0.83 W
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Base Number Matches 1 1

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