BZX55-C0V8 THRU BZX55-C75
ZENER DIODES
FEATURES
DO-35
min. 1.083 (27.5)
♦
Silicon Planar Power Zener Diodes
♦
The Zener voltages are graded according to
the international E 24 standard. Standard Zener
voltage tolerance is ±5%. Replace suffix “C” with
“B” for ±2% tolerance. Other voltage tolerances and
other Zener voltages are available upon request.
max. .150 (3.8)
max.
∅
.079 (2.0)
Cathode
Mark
min. 1.083 (27.5)
max.
∅
.020 (0.52)
MECHANICAL DATA
Dimensions are in inches and (millimeters)
Case:
DO-35 Glass Case
Weight:
approx. 0.13 g
MAXIMUM RATINGS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOL
VALUE
UNIT
Zener Current (see Table “Characteristics”)
Power Dissipation at Tamb = 25°C
Junction Temperature
Storage Temperature Range
P
tot
T
j
T
S
500
(1)
175
– 55 to +175
mW
°C
°C
SYMBOL
MIN.
TYP.
MAX.
UNIT
Thermal Resistance
Junction to Ambient Air
Forward Voltage
at I
F
= 100 mA
R
thJA
–
–
300
(1)
°C/W
V
F
–
–
1.0
Volts
NOTES:
(1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
12/10/98
BZX55-C0V8 THRU BZX55-C75
ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Dynamic resistance
Zener Voltage
range
(1)
at
at
at
I
Z
= 1mA
I
Z
= 5 mA
I
Z
= 5 mA
f = 1 kHz
f = 1 kHz
Type
BZX55
BZX55
BZX55
BZX55
BZX55
BZX55
BZX55
BZX55
BZX55
BZX55
BZX55
BZX55
BZX55
–
–
–
–
–
–
–
–
–
–
–
–
–
C0V8
(3)
C2V7
C3V0
C3V3
C3V6
C3V9
C4V3
C4V7
C5V1
C5V6
C6V2
C6V8
C7V5
V
Z
V
0.73 … 0.83
2.5 … 2.9
2.8 … 3.2
3.1 … 3.5
3.4 … 3.9
3.7 … 4.1
4.0 … 4.6
4.4 … 5.0
4.8
5.2
5.8
6.4
7.0
…
…
…
…
…
5.4
6.0
6.6
7.2
7.9
r
zj
Ω
<
<
<
<
<
<
<
<
<
<
<
<
<
8
85
85
85
85
85
75
60
35
25
10
8
7
<
<
<
<
<
<
<
<
<
<
<
<
<
r
zj
Ω
600
600
600
600
600
600
600
600
550
450
200
150
50
–
–
–
–
–
–
–
–
Temp. coefficient
of Zener Voltage
at
I
Z
= 5 mA
αV
Z
%/K
min
0.25
0.08
0.08
0.08
0.08
0.07
0.04
0.03
max
–
– 0.06
– 0.06
– 0.05
– 0.04
– 0.03
– 0.01
+0.01
+0.05
+0.06
+0.07
+0.08
+0.09
+0.09
+0.10
+0.11
+0.11
+0.11
+0.11
+0.11
+0.11
+0.11
+0.11
+0.11
+0.12
+0.12
+0.12
+0.12
+0.12
+0.12
+0.12
+0.12
+0.12
typ. +0.1
(4)
typ. +0.1
(4)
typ. +0.1
(4)
typ. +0.1
(4)
Reverse leakage current
at
at
T
amb
=
T
amb
=
150°C
25°C
I
R
nA
–
<
<
<
<
<
<
<
<
<
<
<
<
I
R
µA
–
<
<
<
<
<
<
<
<
<
<
<
<
Admissible
Zener
current
(2)
I
ZM
mA
–
1
1
1
1
1
1
1
1
1
2
3
5
6
7
7.5
8.5
9
10
11
12
14
15
17
18
20
22
24
27
28
32
35
38
42
47
51
56
–
135
125
115
105
95
90
85
80
70
64
58
53
47
43
40
36
32
29
27
24
21
20
18
16
14
13
12
11
10
9.2
8.5
7.8
7.0
6.4
5.9
5.3
at
V
R
V
10000
4000
2000
2000
2000
1000
500
100
100
100
100
100
50
40
40
40
40
20
10
2
2
2
2
2
– 0.02
– 0.01
0
+0.01
+0.01
+0.01
+0.02
+0.03
+0.03
+0.03
+0.03
+0.03
+0.03
+0.03
+0.03
+0.03
+0.04
+0.04
+0.04
+0.04
+0.04
+0.04
+0.04
+0.04
+0.04
BZX55 – C8V2
BZX55 – C9V1
BZX55 – C10
BZX55 – C11
BZX55 – C12
BZX55 – C13
BZX55 – C15
BZX55 – C16
BZX55 – C18
BZX55 – C20
BZX55 – C22
BZX55 – C24
BZX55 – C27
BZX55 – C30
BZX55 – C33
BZX55 – C36
BZX55 – C39
BZX55 – C43
BZX55 – C47
BZX55 – C51
BZX55-C56
BZX55-C62
BZX55-C68
BZX55-C75
7.7 … 8.7
8.5 … 9.6
9.4 … 10.6
10.4 … 11.6
11.4 … 12.7
12.4 … 14.1
13.8 … 15.6
15.3 … 17.1
16.8 … 19.1
18.8 … 21.2
20.8 … 23.3
22.8 … 25.6
25.1 … 28.9
28 … 32
31 … 35
34 … 38
37 … 41
(4)
40 … 46
(4)
44 … 50
(4)
48 … 54
(4)
52.0 … 60.0
(4)
58.0 … 66.0
(4)
64.0 … 72.0
(4)
70.0 … 79.0
(4)
<7
< 10
< 15
< 20
< 20
< 26
< 30
< 40
< 50
< 55
< 55
< 80
< 80
< 80
< 80
< 80
< 90
(4)
< 90
(4)
< 110
(4)
< 125
(4)
< 135
(4)
< 150
(4)
< 200
(4)
< 250
(4)
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 220
< 220
< 220
< 220
< 500
(5)
< 600
(5)
< 700
(5)
< 700
(5)
< 1000
(5)
< 1000
(5)
< 1000
(5)
< 1000
(5)
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<5
<5
<5
< 10
< 10
< 10
< 10
< 10
NOTES:
(1) Tested with pulses t
p
= 5 ms
(2) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case
(3) The BZX55–C0V8 is a silicon diode with operation in forward direction. Hence, the index of all parameters should be “F” instead of “Z”.
Connect the cathode lead to the negative pole
(4) at I
Z
= 2.5 mA
(5) at I
Z
= 0.5 mA
Embedded System
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