Power Bipolar Transistor,
| Parameter Name | Attribute value |
| Objectid | 8315788224 |
| package instruction | UNCASED CHIP, S-XUUC-N2 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Date Of Intro | 2016-08-22 |
| YTEOL | 5.72 |
| Maximum collector current (IC) | 0.6 A |
| Collector-emitter maximum voltage | 150 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 50 |
| JESD-30 code | S-XUUC-N2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 150 °C |
| Minimum operating temperature | -65 °C |
| Package body material | UNSPECIFIED |
| Package shape | SQUARE |
| Package form | UNCASED CHIP |
| Polarity/channel type | PNP |
| surface mount | YES |
| Terminal form | NO LEAD |
| Terminal location | UPPER |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 100 MHz |