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CP736V-2N5401

Description
Power Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size400KB,3 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric View All

CP736V-2N5401 Overview

Power Bipolar Transistor,

CP736V-2N5401 Parametric

Parameter NameAttribute value
Objectid8315788224
package instructionUNCASED CHIP, S-XUUC-N2
Reach Compliance Codecompliant
ECCN codeEAR99
Date Of Intro2016-08-22
YTEOL5.72
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage150 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JESD-30 codeS-XUUC-N2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formUNCASED CHIP
Polarity/channel typePNP
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
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