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BZX55C200

Description
surface mount silicon Zener diodes
CategoryDiscrete semiconductor    diode   
File Size29KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
Download Datasheet Parametric Compare View All

BZX55C200 Overview

surface mount silicon Zener diodes

BZX55C200 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
Reach Compliance Codecompliant
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance2000 Ω
Number of components1
Maximum operating temperature175 °C
Maximum power dissipation0.5 W
Nominal reference voltage200 V
surface mountNO
Maximum voltage tolerance6%
Working test current1 mA
Base Number Matches1
BZX55C2V4 ~ BZX55C200
V
Z
: 2.4 - 200 Volts
P
D
: 500 mW
SILICON ZENER DIODES
DO - 35
1.00 (25.4)
min.
0.079(2.0 )max.
FEATURES :
*
*
*
*
*
Complete 2.4 to 200 Volts
High surge current capability
High peak reverse power dissipation
High reliability
Low leakage current
0.150 (3.8)
max.
0.020 (0.52)max.
1.00 (25.4)
min.
Dimensions in inches and ( millimeters )
MECHANICAL DATA
* Case : Molded glass
* Lead : Axial lead solderable per MIL-STD-202,
method 208 guaranteed
* Polarity : Color band denotes cathode end. When operated in zener mode,
cathode will be positive with respect to anode
* Mounting position : Any
* Weight : 0.13 gram
MAXIMUM RATINGS
Rating at 25
°
C ambient temperature unless otherwise specified
Rating
Power Dissipation (Note)
Maximum Forward Voltage at I
F
=100 mA
Maximum Thermal Resistance Junction to Ambient Air (Note1)
Junction Temperature Range
Storage Temperature Range
Symbol
P
D
V
F
R
θ
JA
T
j
T
s
Value
500
1.0
0.3
- 55 to + 175
- 55 to + 175
Unit
mW
V
K / mW
°
C
°
C
Note
: 1. Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.
UPDATE : JANUARY 18, 2002

BZX55C200 Related Products

BZX55C200 BZX55C110 BZX55C120 BZX55C130 BZX55C150 BZX55C160 BZX55C180
Description surface mount silicon Zener diodes 110 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 120 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 130 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 150 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 160 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 180 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to
Maker EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors]
Reach Compliance Code compliant compli compli compli compli compli compli
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode type ZENER DIODE ZENER DIODE ZENER DIODE ZENER DIODE ZENER DIODE ZENER DIODE ZENER DIODE
Maximum dynamic impedance 2000 Ω 600 Ω 800 Ω 950 Ω 1250 Ω 1400 Ω 1700 Ω
Number of components 1 1 1 1 1 1 1
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C
Maximum power dissipation 0.5 W 0.5 W 0.5 W 0.5 W 0.5 W 0.5 W 0.5 W
Nominal reference voltage 200 V 110 V 120 V 130 V 150 V 160 V 180 V
surface mount NO NO NO NO NO NO NO
Maximum voltage tolerance 6% 5.5% 5% 4.6% 8% 4.4% 6.7%
Working test current 1 mA 1 mA 1 mA 1 mA 1 mA 1 mA 1 mA
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