RJ43 datasheet, PDF - EEWORLD Datasheet

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RJ43: Description3 A, SILICON, RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size128KB，4 Pages; ManufacturerSANKEN; Websitehttp://www.sanken-ele.co.jp/en/; Environmental Compliance

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RJ43 Overview

3 A, SILICON, RECTIFIER DIODE

RJ43 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	SANKEN
Parts packaging code	AXIAL DIODE
package instruction	O-XALF-W2
Contacts	2
Reach Compliance Code	unknow
ECCN code	EAR99
application	GENERAL PURPOSE
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	O-XALF-W2
Maximum non-repetitive peak forward current	50 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-40 °C
Maximum output current	3 A
Package body material	UNSPECIFIED
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
surface mount	NO
technology	SCHOTTKY
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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SANKEN ELECTRIC CO., LTD.

FMJ-2303

１適用範囲

Scope

この規格は、FMJ-2303 について適用する。

The present specifications shall apply to Sanken silicon diode, FMJ-2303.

２概要

Outline

種

別

Type

構

造

Structure

主用途

Applications

ショットキーバリアダイオード

Silicon Schottky Barrier Diode

樹脂封止型

不燃化度：規格

UL94V - 0

相½品

Resin Molded

Flammability : UL94V-0 (Equivalent)

高周波整流

High Frequency Rectification

３絶対最大定格

Absolute maximum ratings

No.

項

Item

目

記号

Symbol

単½

Unit

定

150

格

条

件

Rating

Conditions

ピーク非繰返し逆電圧

Transient Peak Reverse Voltage

RSM

F(AV)

FSM

stg

℃

ピーク繰返し逆電圧

Peak Reverse Voltage

平均順電流

Average Forward Current

サージ順電流

Peak Surge Forward Current

減定格

項参照

Refer to Derating of 6

10msec.正弦半波単発

Half sinewave, one shot

限界値

I t Limiting Value

112.5

-40∼+150

A. C. 1. 0

リードケース間(1 分間)

Junction to case (1minute)

接合部温度

Junction Temperature

保存温度

Storage Temperature

絶縁耐圧

Dielectric Strength

No.1,2,4,5

は一素子½たりの定格を示す。

No.1,2,4&5 show ratings per one chip.

４電気的特性

(特に指定の無い場合は、25℃とする。)

Electrical characteristics (Ta=25℃, unless otherwise specified)

No.

項

Item

目

記号

Symbol

単½

Unit

特

性

=15A

条

件

Value

Conditions

順方向降下電圧

Forward Voltage Drop

逆方向漏れ電流

Reverse Leakage Current

H½I

th(j-c)

℃/W

0.48 max.

15 max.

500 max.

4.0 max.

高温逆方向漏れ電流

Reverse Leakage Current Under

High Temperature

, T

=150℃

接合部−裏面取付け穴周辺部

Between Junction and case

熱抵抗

Thermal Resistance

No.1,2,3

は一素子½たりの特性を示す。

No.1,2,&3 show characteristics per one chip.

040909

1／4

61426-01

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