DC COMPONENTS CO., LTD.
R
BZX55C2V4
THRU
BZX55C39
RECTIFIER SPECIALISTS
TECHNICAL SPECIFICATIONS OF
GLASS SILICON ZENER DIODES
FEATURES
* Voltage Range:2.4V to 39V
* Double slug type construction
DO-34 / DO-35
MECHANICAL DATA
* Case: Glass sealed case
* Lead: MIL-STD-202E, Method 208 guaranteed
* Polarity: Color band denotes cathode end
* Mounting position: Any
* Weight: 0.13 gram
0.52Ø
25.0MIN
L
2.0MAX
25.0MIN
DO-34 DO-35
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
o
L:
2.9
MAX
4.2
MAX
Dimensions in millimeters
SYMBOL
Zener Current see Table "Characterisitics"
o
Power Dissipation at Tamb=25 C
VALUE
500
(1)
175
-55 to + 175
UNITS
Ptot
Tj
Tstg
mW
o
o
Junction Temperature
Storage Temperature Range
C
C
K/mW
Thermal Resistance
Junction to Ambient Air
RthA
-
-
0.3
(1)
Typ.
Min.
Max.
Volts
Forward Voltage
at IF=100mA
V
F
-
-
1
Typ.
Min.
Max.
1)Valid Provided that leads are kept at ambient temperature at a distance of 8 mm from case.
NOTE: 1.Standard Zener Voltage Tolerance ± 5%
2.Suffix "M" stands for "DO-34" package.(e.g.:BZX55C2V4M, BZX55C39M)
158
RATING AND CHARACTERISTIC CURVES (BZX55C SERIES)
Nominal
Zener
Maximum Zener
Maximum Reverse
Typical
Maximum
Zener
Test
IZK
Regulator
Impedance
Leakage Current Temperature
Voltage
Current
Current
Coefficient
VZ@IZT
IZT
ZZT@IZT ZZT@IZK
IR
@VR
IZM
o
Min
Max
mA
Ohms
Ohms
mA
uA
Volts
% / C
mA
BZX55C2V4
BZX55C2V7
BZX55C3V0
BZX55C3V3
BZX55C3V6
BZX55C3V9
BZX55C4V3
BZX55C4V7
BZX55C5V1
BZX55C5V6
BZX55C6V2
BZX55C6V8
BZX55C7V5
BZX55C8V2
BZX55C9V1
BZX55C10
B Z X 5 5 C 11
BZX55C12
BZX55C13
BZX55C15
BZX55C16
BZX55C18
BZX55C20
BZX55C22
BZX55C24
BZX55C27
BZX55C30
BZX55C33
BZX55C36
BZX55C39
2.28
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11 . 4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
2.56
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11 . 6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
85
85
85
85
85
85
75
60
35
25
10
8
7
7
10
15
20
20
26
30
40
50
55
55
80
80
80
80
80
90
600
600
600
600
600
600
600
600
550
450
200
150
50
50
50
70
70
90
11 0
11 0
170
170
220
220
220
220
220
220
220
500
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
50
10
4
2
2
2
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
1
1
1
1
1
1
1
1
1
1
2
3
5
6.2
6.8
7.5
8.2
9.1
10
11
12
12
15
16
18
20
22
24
27
30
-0.085
-0.080
-0.075
-0.070
-0.065
-0.060
±0.055
±0.030
±0.030
+0.038
+0.045
+0.050
+0.058
+0.062
+0.068
+0.075
+0.076
+0.077
+0.079
+0.082
+0.083
+0.085
+0.086
+0.087
+0.088
+0.090
+0.091
+0.092
+0.093
+0.094
155
135
125
115
105
95
90
85
80
70
64
58
53
74
43
40
36
32
29
27
24
21
20
18
16
14
13
12
11
10
Breakdown characteristic
changes in the power dissipation
due to the ambient temperature.
Power dissipation
Pd(mw)
IZ
30
mA
50
5V
10V
15V
20V
40
BZX55-SERIES
25V
30V
500
400
300
200
100
20
Test Current
IZ 5mA
10
50
100 150 200 300
Ta(
o
C)
Ambient Temperature.
0
6V8
6V2
5V6
5V1
4V7
4V3
3V9
3V3
2V4
9V1
11
12
15
20
22
24
27
VZ
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R
159
MCU
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