RHRP8100CC
Data Sheet
January 2000
File Number
3965.2
8A, 1000V Hyperfast Dual Diode
The RHRP8100CC is a hyperfast dual diode with soft
recovery characteristics (t
rr
< 55ns). It has half the recovery
time of ultrafast diodes and is of silicon nitride passivated
ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifiers in a variety of switching power supplies
and other power switching applications. Its low stored charge
and hyperfast soft recovery minimize ringing and electrical
noise in many power switching circuits, thus reducing power
loss in the switching transistors.
Formerly developmental type TA49060.
Features
• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . . <55ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175
o
C
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1000V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Ordering Information
PART NUMBER
RHRP8100CC
PACKAGE
TO-220AB
BRAND
RHR8100C
Packaging
JEDEC TO-220AB
ANODE 2
CATHODE
ANODE 1
NOTE: When ordering, use the entire part number.
Symbol
K
CATHODE
(FLANGE)
A
1
A
2
Absolute Maximum Ratings
(Per Leg) T
C
= 25
o
C, Unless Otherwise Specified
RHRP8100CC
UNITS
V
V
V
A
A
A
W
mJ
o
C
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= 140
o
C)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
FRM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
1000
1000
1000
8
16
100
75
20
-65 to 175
1
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Intersil Corporation 2000
RHRP8100CC
Electrical Specifications
SYMBOL
V
F
I
F
= 8A
I
F
= 8A, T
C
= 150
o
C
I
R
V
R
= 1000V
V
R
= 1000V, T
C
= 150
o
C
t
rr
I
F
= 1A, dI
F
/dt = 200A/µs
I
F
= 8A, dI
F
/dt = 200A/µs
t
a
t
b
Q
RR
C
J
R
θJC
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300µs, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time (Figure 9), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 9).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
Q
RR
= Reverse recovery charge.
C
J
= Junction Capacitance.
R
θJC
= Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
I
F
= 8A, dI
F
/dt = 200A/µs
I
F
= 8A, dI
F
/dt = 200A/µs
I
F
= 8A, dI
F
/dt = 200A/µs
V
R
= 10V, I
F
= 0A
(Per Leg) T
C
= 25
o
C, Unless Otherwise Specified
TEST CONDITION
MIN
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
30
20
175
30
-
MAX
3.0
2.5
100
500
60
65
-
-
-
-
2.0
UNITS
V
V
µA
µA
ns
ns
ns
ns
nC
pF
o
C/W
Typical Performance Curves
40
I
R
, REVERSE CURRENT (µA)
500
175
o
C
100
10
100
o
C
1
25
o
C
0.1
0.01
I
F
, FORWARD CURRENT (A)
10
175
o
C
1
0.5
0
0.5
100
o
C
25
o
C
0.001
1
1.5
2
2.5
3
3.5
4
0
200
400
600
800
1000
V
F
, FORWARD VOLTAGE (V)
V
R
, REVERSE VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
2
RHRP8100CC
Typical Performance Curves
60
50
t, RECOVERY TIMES (ns)
40
trr
30
20
10
0
0.5
ta
tb
t, RECOVERY TIMES (ns)
T
C
= 25
o
C, dI
F
/dt = 200A/µs
(Continued)
100
T
C
= 100
o
C, dI
F
/dt = 200A/µs
80
60
trr
40
ta
20
tb
0
1
I
F
, FORWARD CURRENT (A)
4
8
0.5
1
I
F
, FORWARD CURRENT (A)
4
8
FIGURE 3. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 4. t
rr
, t
a
AND t
b
curves vs FORWARD CURRENT
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
120
T
C
= 175
o
C, dI
F
/dt = 200A/µs
100
t, RECOVERY TIMES (ns)
80
trr
60
40
20
0
0.5
1
I
F
, FORWARD CURRENT (A)
4
8
ta
tb
10
8
DC
6
SQ. WAVE
4
2
0
100
115
130
145
160
175
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 5. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 6. CURRENT DERATING CURVE
100
C
J
, JUNCTION CAPACITANCE (pF)
80
60
40
20
0
0
50
100
150
200
V
R
, REVERSE VOLTAGE (V)
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
3
RHRP8100CC
Test Circuits and Waveforms
V
GE
AMPLITUDE AND
R
G
CONTROL dI
F
/dt
t
1 AND
t
2
CONTROL I
F
L
DUT
R
G
V
GE
t
1
t
2
CURRENT
SENSE
+
V
DD
0
I
F
dI
F
dt
ta
trr
tb
IGBT
-
0.25 I
RM
I
RM
FIGURE 8. t
rr
TEST CIRCUIT
I
MAX
= 1A
L = 40mH
R < 0.1Ω
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
L
CURRENT
SENSE
Q
1
V
DD
DUT
R
+
V
DD
I V
FIGURE 9. t
rr
WAVEFORMS AND DEFINITIONS
V
AVL
I
L
I
L
-
t
0
t
1
t
2
t
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
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