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BZD27-C160

Description
Trans Voltage Suppressor Diode, 150W, 160V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, MINIMELF-2
CategoryDiscrete semiconductor    diode   
File Size91KB,4 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance  
Download Datasheet Parametric View All

BZD27-C160 Overview

Trans Voltage Suppressor Diode, 150W, 160V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, MINIMELF-2

BZD27-C160 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Objectid1383384241
Parts packaging codeMELF
package instructionO-PELF-R2
Contacts2
Reach Compliance Codecompliant
Country Of OriginThailand
ECCN codeEAR99
YTEOL6.18
Minimum breakdown voltage153 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PELF-R2
Maximum non-repetitive peak reverse power dissipation150 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.8 W
Maximum repetitive peak reverse voltage160 V
surface mountYES
technologyZENER
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
TH97/2478
TH09/2479
IATF 0113686
SGS TH07/1033
BZD27 Series
FEATURES :
* High maximum operating temperature
* Low leakage current
* Excellent stability
* Zener working voltage range: 3.6 to 270 V for 46 types
* Transient suppressor stand-off voltage range:
6.2 to 430 V for 45 types
VOLTAGE REGULATOR DIODES
MiniMELF (SOD-80)
φ
1.6 ± 0.1
0.4 ± 0.1
3.5 ± 0.1
* Pb / RoHS Free
MECHANICAL DATA :
* Plastic Case Mini MELF/ SOD-80
* Terminals: plated terminals solderable
per MIL-STD-750
* Polarity : Color band denotes cathode
end except Bipolar.
* Mounting position : Any
* Weight : 0.04 gram
Dimensions in millimeters
MAXIMUM RATINGS
Parameter
Total Power dissipation
BZD27-C3V6 to BZD27-C6V8
BZD27-C7V5 to BZD27-C510
Total Power dissipation
BZD27-C3V6 to BZD27-C6V8
BZD27-C7V5 to BZD27-C510
Non-repetitive peak reverse
power dissipation
Non-repetitive peak reverse power
dissipation (BZD27-C7V5 to -C510)
Forward voltage
Junction and Storage Temperature Range
BZD27-C3V6 to BZD27-C6V8
BZD27-C7V5 to BZD27-C510
Symbol
P
tot
Condition
Ttp = 105 °C; see Fog. 1 and 2
Min.
-
-
Max.
1.7
2.3
0.8
0.8
300
150
1.2
+200
+175
Unit
W
P
tot
P
ZSM
P
RSM
V
F
T
J
, T
STG
PCB mounted
Tamb = 60 °C, see Fig. 1
Tamb = 55 °C, see Fig. 2
tp = 100 µs; square pulse;
Tj = 25°C prior to surge; see Fig. 5
10/1000 µs exponential pulse (see Fig. 5)
Tj = 25°C prior to surge
I
F
= 0.2 A; Tj = 25 °C; see Fig. 3
-
-
-
-
-
-65
-65
W
W
W
V
°C
THERMAL CHARACTERISTICS
Parameter
Thermal resistance from junction to tie-point
BZD27-C3V6 to BZD27-C6V8
BZD27-C7V5 to BZD27-C510
Thermal resistance from junction to ambient
BZD27-C3V6 to BZD27-C6V8
BZD27-C7V5 to BZD27-C510
Symbol
R
th j-tp
Condition
Value
55
30
Unit
K/W
R
th j-a
Note 1
175
150
K/W
Note :
(1) Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40
µm on an must space.
Page 1 of 4
Rev. 02 : November 9, 2011
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