www.fairchildsemi.com
KA5S-SERIES
KA5S0765C/KA5S09654QT/KA5S0965/
KA5S12656/KA5S1265
Fairchild Power Switch(FPS)
Features
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Wide Operating Frequency Range Up to 150Khz
Lowest Cost SMPS Solution
Lowest External Components
Low Start-up Current (max:170uA)
Low Operating Current (max:12mA)
Internal High Voltage SenseFET
Over Voltage Protection With Latch Mode (Min23V)
Over Load Protection With Latch Mode
Over Current Protection With Latch Mode
Internal Thermal Protection With Latch Mode
Pulse By Pulse Over Current Limiting
Under Voltage Lockout With Hysteresis
External Sync. Terminal
TO-3P-5L
1
TO-220F-5L
TO-220-5L
1
1
1. Drain 2. Gnd 3. V
CC
4. FeedBack 5. Sync.
Internal Block Diagram
V
CC
3
V
CC
UVLO
+
-
15/9V
Soft Start
& Sync
5
VREF
Feedback 4
0.95mA
2.5V
R
VREF
V
CC
4µA
OLP
(Vfb=7.5V)
TSD
(Tj=160°C)
OVP
(V
CC
=25V)
1µs Window
Open Circuit
OCP
(V
S
=1.1V)
S
Q
R
Shutdown Latch
-
Vth.sy
+
7V
6V
-
+
Voffset
R
S
Q
Bias
Vref
2.5V
OSC
CLK
+
-
VREF UVLO
Drain
1
SenseFET
V
S
Rsense
2 GND
Power-on Reset
(VCC=6.5V)
Rev.1.0.2
©2001 Fairchild Semiconductor Corporation
KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/KA5S1265
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Characteristic
Symbol
V
D,MAX
V
DGR
V
GS
I
DM
I
D
I
D
I
AS
(E
AS
)
V
CC,MAX
V
FB
V
SS
P
D
(Watt H/S)
Derating
T
J
T
A
T
STG
Value
650
650
±30
28
7.0
5.6
20(570)
30
-0.3 to V
CC
-0.3 to 8
135
1.1
+160
-25 to +85
-55 to +150
Unit
V
V
V
ADC
ADC
ADC
A(mJ)
V
V
V
W
W /
°C
°C
°C
°C
KA5S0765C
Maximum drain voltage
Drain-gate voltage(R
GS
=1MΩ)
Gate-source(GND) voltage
Drain current pulsed
(1)
Continuous drain current (Tc = 25°C)
Continuous drain current (Tc = 100°C)
Single pulsed avalanch current
(3)
(Energy
(2)
)
Maximum supply voltage
Input voltage range
Total power dissipation
Operating junction temperature.
Operating ambient temperature.
Storage temperature range.
KA5S09654QT
Maximum drain voltage
Drain-gate voltage(R
GS
=1MΩ)
Gate-source(GND) voltage
Drain current pulsed
(1)
Continuous drain current (Tc = 25°C)
Continuous drain current (Tc = 100°C)
Single pulsed avalanch current
(3)
(Energy
(2)
)
Maximum supply voltage
Input voltage range
Total power dissipation
Operating junction temperature.
Operating ambient temperature.
Storage temperature range.
V
D,MAX
V
DGR
V
GS
I
DM
I
D
I
D
I
AS
(E
AS
)
V
CC,MAX
V
FB
V
SS
P
D
(Watt H/S)
Derating
T
J
T
A
T
STG
650
650
±30
49
9.0
5.7
25(660)
30
-0.3 to V
CC
-0.3 to 8
160
1.28
+160
-25 to +85
-55 to +150
V
V
V
ADC
ADC
ADC
A(mJ)
V
V
V
W
W /
°C
°C
°C
°C
2
KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/
Absolute Maximum Ratings (Continued)
(Ta=25°C, unless otherwise specified)
Characteristic
Symbol
V
D,MAX
V
DGR
V
GS
I
DM
I
D
I
D
I
AS
(E
AS
)
V
CC,MAX
V
FB
V
SS
P
D
(Watt H/S)
Derating
T
J
T
A
T
STG
Value
650
650
±30
36
9.0
5.8
28(950)
30
-0.3 to V
CC
-0.3 to 8
170
1.33
+160
-25 to +85
-55 to +150
Unit
V
V
V
ADC
ADC
ADC
A(mJ)
V
V
V
W
W /
°C
°C
°C
°C
KA5S0965
Maximum Drain Voltage
Drain-Gate Voltage(R
GS
=1MΩ)
Gate-Source(GND) Voltage
Drain Current Pulsed
(1)
Continuous Drain Current (Tc = 25°C)
Continuous Drain Current (Tc = 100°C)
Single Pulsed Avalanch Current
(3)
(Energy
(2)
)
Maximum Supply Voltage
Input Voltage Range
Total Power Dissipation
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
KA5S12656
Maximum Drain Voltage
Drain-Gate Voltage(R
GS
=1MΩ)
Gate-Source(GND) Voltage
Drain Current Pulsed
(1)
Continuous Drain Current (Tc = 25°C)
Continuous Drain Current (Tc = 100°C)
Single Pulsed Avalanch Current
(3)
(Energy
(2)
)
Maximum Supply Voltage
Input Voltage Range
Total Power Dissipation
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
V
D,MAX
V
DGR
V
GS
I
DM
I
D
I
D
I
AS
(E
AS
)
V
CC,MAX
V
FB
V
SS
P
D
(Watt H/S)
Derating
T
J
T
A
T
STG
650
650
±30
48
12
8.4
30(785)
30
-0.3 to V
CC
-0.3 to 8
160
1.28
+160
-25 to +85
-55 to +150
V
V
V
ADC
ADC
ADC
A(mJ)
V
V
V
W
W /
°C
°C
°C
°C
3
KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/KA5S1265
Absolute Maximum Ratings (Continued)
(Ta=25°C, unless otherwise specified)
Characteristic
Symbol
V
D,MAX
V
DGR
V
GS
I
DM
I
D
I
D
I
AS
(E
AS
)
V
CC,MAX
V
FB
V
SS
P
D
(Watt H/S)
Derating
T
J
T
A
T
STG
Value
650
650
±30
48
12
8.4
30(785)
30
-0.3 to V
CC
-0.3 to 8
160
1.28
+160
-25 to +85
-55 to +150
Unit
V
V
V
ADC
ADC
ADC
A(mJ)
V
V
V
W
W /
°C
°C
°C
°C
KA5S1265
Maximum Drain Voltage
Drain-Gate Voltage(R
GS
=1MΩ)
Gate-Source(GND) Voltage
Drain Current Pulsed
(1)
Continuous Drain Current (Tc = 25°C)
Continuous Drain Current (Tc = 100°C)
Single Pulsed Avalanch Current
(3)
(Energy
(2)
)
Maximum Supply Voltage
Input Voltage Range
Total Power Dissipation
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
Note:
1. Repetitive rating : Pulse width limited by maximum junction temperature
2. L = 10mH, V
DD
=50V, R
G
= 27Ω, starting Tj = 25°C
3. L = 13uH, starting Tj = 25°C
4
KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/
Electrical Characteristics (SFET Part)
(Ta = 25°C unless otherwise specified)
Parameter
Symbol
BV
DSS
I
DSS
R
DS
(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
V
DD
=0.5BV
DSS
, I
D
=7.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
V
GS
=10V, I
D
=7.0A,
V
DS
=0.5BV
DSS
(MOSFET
Switching time are
Essentially independent of
Operating temperature)
V
GS
=0V, V
DS
=25V,
f = 1MHz
Conditions
V
GS
=0V, I
D
=50µA
V
DS
=Max., Rating, V
GS
=0V
Zero gate voltage drain current
Static drain-source on resistance
(1)
Forward transconductance
(1)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rise time
Turn off delay time
Fall time
Total gate charge
(gate-source+gate-drain)
Gate-source charge
Gate-drain (Miller) charge
V
DS
=0.8Max., Rating,
V
GS
=0V, T
C
=125°C
V
GS
=10V, I
D
=4.0A
V
DS
=15V, I
D
=4.0A
Min.
650
-
-
-
3.0
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
1.25
-
1600
310
120
25
55
80
50
-
9.3
29.3
Max.
-
50
200
1.6
-
-
-
-
-
-
-
-
72
-
-
nC
nS
pF
Unit
V
µA
µA
Ω
S
KA5S0765C
Drain-source breakdown voltage
KA5S09654QT
Drain-source breakdown voltage
Zero gate voltage drain current
Static drain-source on resistance
(1)
Forward transconductance
(1)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rise time
Turn off delay time
Fall time
Total gate charge
(gate-source+gate-drain)
Gate-source charge
Gate-drain (Miller) charge
BV
DSS
I
DSS
R
DS
(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
V
DD
=0.5BV
DSS
, I
D
=9.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
V
GS
=10V, I
D
=9.0A,
V
DS
=0.5BV
DSS
(MOSFET
Switching time are
Essentially independent of
Operating temperature)
V
GS
=0V, V
DS
=25V,
f = 1MHz
V
GS
=0V, I
D
=50µA
V
DS
=Max., Rating, V
GS
=0V
V
DS
=0.8Max., Rating,
V
GS
=0V, T
C
=125°C
V
GS
=10V, I
D
=4.5A
V
DS
=50V, I
D
=4.5A
650
-
-
-
3.0
-
-
-
-
-
-
-
-
-
-
1.1
-
1300
135
25
25
75
130
70
45
-
-
8
22
-
200
300
1.2
-
-
-
-
-
-
-
-
-
-
-
nC
nS
pF
V
µA
µA
Ω
S
5
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