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1N4006T50A

Description
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41, D4, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size41KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

1N4006T50A Overview

Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41, D4, 2 PIN

1N4006T50A Parametric

Parameter NameAttribute value
MakerFairchild
Parts packaging codeDO-41
package instructionD4, 2 PIN
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-41
JESD-30 codeO-PALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum power dissipation3 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage800 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
1N4001-1N4007
1N4001 - 1N4007
Features
Low forward voltage drop.
High surge current capability.
DO-41
COLOR BAND DENOTES CATHODE
General Purpose Rectifiers (Glass Passivated)
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
A
= 25°C unless otherwise noted
Parameter
4001
Peak Repetitive Reverse Voltage
Average Rectified Forward Current,
.375 " lead length @ T
A
= 75°C
Non-repetitive Peak Forward Surge
Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature
50
Value
4002
100
Units
4005
600
4003
200
4004
400
1.0
30
4006 4007
800
1000
V
A
A
°C
°C
T
stg
T
J
-55 to +175
-55 to +175
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
Value
3.0
50
Units
W
°C/W
Electrical Characteristics
Symbol
V
F
I
rr
I
R
C
T
T
A
= 25°C unless otherwise noted
Parameter
4001
Forward Voltage @ 1.0 A
Maximum Full Load Reverse Current, Full
Cycle
T
A
= 75°C
Reverse Current @ rated V
R
T
A
= 25°C
T
A
= 100°C
Total Capacitance
V
R
= 4.0 V, f = 1.0 MHz
Device
4002
4003
4004
1.1
30
5.0
500
15
Units
4005
4006 4007
V
µA
µA
µA
pF
2001
Fairchild Semiconductor Corporation
1N4001-1N4007, Rev. C

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