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1N4934G-T3

Description
Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size53KB,4 Pages
ManufacturerWon-Top Electronics Co., Ltd.
Websitehttps://www.wontop.com/
Download Datasheet Parametric View All

1N4934G-T3 Overview

Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2

1N4934G-T3 Parametric

Parameter NameAttribute value
MakerWon-Top Electronics Co., Ltd.
Parts packaging codeDO-41
package instructionO-PALF-W2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-41
JESD-30 codeO-PALF-W2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.2 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
WTE
POWER SEMICONDUCTORS
1N4933G – 1N4937G
Pb
1.0A GLASS PASSIVATED FAST RECOVERY DIODE
Features
!
!
!
!
!
Glass Passivated Die Construction
Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
A
B
A
Mechanical Data
!
!
!
!
!
!
!
Case: DO-41, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.34 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
D
DO-41
Dim
Min
Max
25.4
A
4.06
5.21
B
0.71
0.864
C
2.00
2.72
D
All Dimensions in mm
C
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
@T
A
=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@T
A
= 75°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
1N4933G
1N4934G
1N4935G
1N4936G
1N4937G
Unit
50
35
100
70
200
140
1.0
400
280
600
420
V
V
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Operating Temperature Range
Storage Temperature Range
@I
F
= 1.0A
@T
A
= 25°C
@T
A
= 100°C
I
FSM
V
FM
I
RM
t
rr
C
j
T
j
T
STG
30
1.2
5.0
100
200
15
-65 to +150
-65 to +150
A
V
µA
nS
pF
°C
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
1N4933G – 1N4937G
1 of 4
© 2006 Won-Top Electronics

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