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BUK9Y19-55B,115

Description
N-channel TrenchMOS logic level FET SOIC 4-Pin
CategoryDiscrete semiconductor    The transistor   
File Size724KB,12 Pages
ManufacturerAmphenol
Websitehttp://www.amphenol.com/
Download Datasheet Parametric View All

BUK9Y19-55B,115 Overview

N-channel TrenchMOS logic level FET SOIC 4-Pin

BUK9Y19-55B,115 Parametric

Parameter NameAttribute value
Brand NameNexperia
MakerAmphenol
Parts packaging codeSOIC
package instructionSMALL OUTLINE, R-PSSO-G4
Contacts4
Manufacturer packaging codeSOT669
Reach Compliance Codenot_compliant
ECCN codeEAR99
Samacsys Confidence4
Samacsys StatusReleased
Samacsys PartID672734
Samacsys Pin Count6
Samacsys Part CategoryMOSFET (N-Channel)
Samacsys Package CategoryOther
Samacsys Footprint NameBUK9Y19-55B,115-4
Samacsys Released Date2020-02-27 10:24:30
Is SamacsysN
Other featuresLOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)80 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage55 V
Maximum drain current (ID)46 A
Maximum drain-source on-resistance0.021 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)184 A
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
BUK9Y19-55B
N-channel TrenchMOS logic level FET
Rev. 03 — 29 February 2008
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode power Field-Effect Transistor (FET) in a
plastic package using
Nexperia
High-Performance Automotive (HPA) TrenchMOS
technology. This product has been designed and qualified to the appropriate AEC
standard for use in automotive critical applications.
1.2 Features
175
°C
rated
Q101 compliant
Logic level compatible
Very low on-state resistance
1.3 Applications
12 V and 24 V loads
General purpose power switching
Automotive systems
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
I
D
P
tot
R
DSon
Quick reference
Parameter
drain current
total power dissipation
drain-source on-state
resistance
Conditions
V
GS
= 5 V; T
mb
= 25
°C;
see
Figure 1
and
4
T
mb
= 25
°C;
see
Figure 2
V
GS
= 5 V; I
D
= 20 A;
T
j
= 25
°C;
see
Figure 12
and
13
I
D
= 46 A; V
sup
55 V;
R
GS
= 50
Ω;
V
GS
= 5 V;
T
j(init)
= 25
°C;
unclamped
Min
-
-
-
Typ
-
-
16.3
Max
46
85
19
Unit
A
W
Static characteristics
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
-
-
80
mJ
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