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M59PW1282100M1T

Description
128Mbit (two 64Mb, x16, Uniform Block, LightFlash⑩) 3V Supply, Multiple Memory Product
Categorystorage    storage   
File Size150KB,24 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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M59PW1282100M1T Overview

128Mbit (two 64Mb, x16, Uniform Block, LightFlash⑩) 3V Supply, Multiple Memory Product

M59PW1282100M1T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeSOIC
package instruction0.500 INCH, PLASTIC, SO-44
Contacts44
Reach Compliance Codecompli
ECCN code3A991.B.1.A
Maximum access time100 ns
command user interfaceNO
Data pollingYES
JESD-30 codeR-PDSO-G44
JESD-609 codee3
length28.5 mm
memory density134217728 bi
Memory IC TypeFLASH MODULE
memory width16
Number of functions1
Number of departments/size64
Number of terminals44
word count8388608 words
character code8000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize8MX16
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSOP44,.63
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
power supply3/3.3 V
Programming voltage12 V
Certification statusNot Qualified
Maximum seat height3 mm
Department size128K
Maximum standby current0.00015 A
Maximum slew rate0.02 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
switch bitYES
typeNOR TYPE
width12.6 mm
M59PW1282
128Mbit (two 64Mb, x16, Uniform Block, LightFlash™)
3V Supply, Multiple Memory Product
FEATURES SUMMARY
MASK-ROM PIN-OUT COMPATIBLE
Figure 1. Package
TWO 64 Mbit LightFlash™ MEMORIES
STACKED IN A SINGLE PACKAGE
SUPPLY VOLTAGE
– V
CC
= 2.7 to 3.6V for Read
– V
PP
= 11.4 to 12.6V for Program and Erase
ACCESS TIME
– 90ns at V
CC
= 3.0 to 3.6V
– 100, 120ns at V
CC
= 2.7 to 3.6V
PROGRAMMING TIME
– 9µs per Word typical
– Multiple Word Programming Option
(16s typical Chip Program)
SO44 (M)
ERASE TIME
– 85s typical Chip Erase
UNIFORM BLOCKS
– 64 blocks of 2 Mbits
PROGRAM/ERASE CONTROLLER
– Embedded Word Program algorithms
10,000 PROGRAM/ERASE CYCLES per
BLOCK
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code : 88A8h
November 2003
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Description 128Mbit (two 64Mb, x16, Uniform Block, LightFlash⑩) 3V Supply, Multiple Memory Product 128Mbit (two 64Mb, x16, Uniform Block, LightFlash⑩) 3V Supply, Multiple Memory Product 128Mbit (two 64Mb, x16, Uniform Block, LightFlash⑩) 3V Supply, Multiple Memory Product 128Mbit (two 64Mb, x16, Uniform Block, LightFlash⑩) 3V Supply, Multiple Memory Product 128Mbit (two 64Mb, x16, Uniform Block, LightFlash⑩) 3V Supply, Multiple Memory Product

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