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TC1N4148M.TB

Description
Rectifier Diode, 1 Element, 0.15A, Silicon, DO-34, HERMETIC SEALED, GLASS, DO-204, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size153KB,6 Pages
ManufacturerTak Cheong
Websitehttp://www.takcheong.com/
Environmental Compliance
Download Datasheet Parametric View All

TC1N4148M.TB Overview

Rectifier Diode, 1 Element, 0.15A, Silicon, DO-34, HERMETIC SEALED, GLASS, DO-204, 2 PIN

TC1N4148M.TB Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerTak Cheong
Parts packaging codeDO-204
package instructionO-LALF-W2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JEDEC-95 codeDO-34
JESD-30 codeO-LALF-W2
JESD-609 codee3
Maximum non-repetitive peak forward current2 A
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current0.15 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.5 W
Certification statusNot Qualified
Maximum reverse recovery time0.004 µs
surface mountNO
Terminal surfaceTin (Sn)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
®
TAK CHEONG
SEM IC O N DU C TO R
500 mW DO-34 Hermetically
Sealed Glass Fast Switching
Diodes
AXIAL LEAD
DO34
Absolute Maximum Ratings
Symbol
P
D
T
STG
T
J
W
IV
I
O
I
FM
I
FSURGE
Power Dissipation
T
A
= 25°C unless otherwise noted
Value
500
-65 to +200
+175
75
150
450
2
Units
mW
°C
°C
V
mA
mA
A
DEVICE MARKING DIAGRAM
(TC1N4148M)
Parameter
Storage Temperature Range
Operating Junction Temperature
Working Inverse Voltage
Average Rectified Current
Non-repetitive Peak Forward Current
Peak Forward Surge Current
L
: Logo
DEVICE MARKING DIAGRAM
(TC1N4448M / TC1N914BM)
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
Fast Switching Device (T
RR
<4.0 nS)
DO-34 Package (JEDEC DO-204)
Through-Hole Device Type Mounting
Hermetically Sealed Glass
Compression Bonded Construction
All external surfaces are corrosion resistant and leads are readily solderable
Cathode indicated by polarity band
DEVICE MARKING DIAGRAM
(TC1N4148M)
Cathode
L
: Logo
Device Code : TC1NxxxxM
L xxxx
Anode
ELECTRICAL SYMBOL
Electrical Characteristics
Symbol
B
V
Breakdown Voltage
T
A
= 25°C unless otherwise noted
Parameter
Test Condition
I
R
=100µA
I
R
=5µA
Limits
Min
100
Volts
75
25
5
0.62
0.72
1.0
1.0
Volts
nA
µA
Max
Unit
I
R
Reverse Leakage Current
V
R
=20V
V
R
=75V
V
F
Forward Voltage
TC1N4448M, TC1N914BM
TC1N4148M,
TC1N4148M
TC1N4448M, TC1N914BM
I
F
=5mA
I
F
=10mA
I
F
=100mA
I
F
=10mA, V
R
=6V
R
L
=100Ω
I
RR
=1mA
T
RR
Reverse Recovery Time
4
nS
C
Capacitance
V
R
=0V, f=1M
HZ
4
pF
October 2005 / B
Page 1
TC1N4148M/TC1N4448M/TC1N914BM
L
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