DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Toshiba Semiconductor |
| package instruction | R-PDSO-C2 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Is Samacsys | N |
| Maximum breakdown voltage | 320 V |
| Minimum breakdown voltage | 300 V |
| Breakdown voltage nominal value | 310 V |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | TRANS VOLTAGE SUPPRESSOR DIODE |
| JESD-30 code | R-PDSO-C2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| polarity | UNIDIRECTIONAL |
| Maximum power dissipation | 1 W |
| Certification status | Not Qualified |
| Maximum reverse current | 10 µA |
| surface mount | YES |
| technology | AVALANCHE |
| Terminal form | C BEND |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Base Number Matches | 1 |