1N4152
1N4152
DO-35
Color Band Denotes Cathode
Small Signal Diode
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
A
= 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
Value
40
200
1.0
4.0
-65 to +200
175
Units
V
mA
A
A
°C
°C
T
stg
T
J
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 200 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJA
Power Dissipation
Thermal Resistance, Junction to Ambient
Parameter
Value
500
300
Units
mW
°C/W
Electrical Characteristics
Symbol
V
R
V
F
T
A
= 25°C unless otherwise noted
Parameter
Breakdown Voltage
Forward Voltage
Test Conditions
I
R
= 5.0
µA
I
F
= 0.1 mA
I
F
= 0.25 mA
I
F
= 1.0 mA
I
F
= 2.0 mA
I
F
= 10 mA
I
F
= 20 mA
V
R
= 30 V
V
R
= 30 V, T
A
= 150°C
V
R
= 0, f = 1.0 MHz
I
F
= I
R
= 10 mA, R
L
= 100
Ω
I
rr
= 1.0 mA
I
F
= 10 mA, V
R
= 6.0 V,
R
L
= 100
Ω
I
rr
= 1.0 mA
Min
40
0.49
0.53
0.59
0.62
0.70
0.74
Max
0.55
0.59
0.67
0.70
0.81
0.88
50
50
2
4
2
Units
V
V
V
V
V
V
V
nA
µA
pF
ns
ns
I
R
C
T
t
rr1
t
rr2
Reverse Current
Total Capacitance
Reverse Recovery Time
Reverse Recovery Time
2002
Fairchild Semiconductor Corporation
1N4152, Rev. A
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Formative or
In Design
First Production
Definition
This datasheet contains the design specifications for
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This datasheet contains preliminary data, and
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Rev. H5
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