1N4002GP datasheet, PDF - EEWORLD Datasheet

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1N4002GP: DescriptionRectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-41,; CategoryDiscrete semiconductor diode; File Size36KB，2 Pages; ManufacturerFagor Electrónica; Environmental Compliance

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1N4002GP Overview

Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-41,

1N4002GP Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Fagor Electrónica
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JEDEC-95 code	DO-41
JESD-30 code	O-PALF-W2
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak forward current	30 A
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	100 V
surface mount	NO
Terminal surface	TIN
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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1N4001GP ........ 1N4007GP

1 Amp. Glass Passivated Junction Rectifier

Dimensions in mm.

DO-41

(Plastic)

Voltage

50 to 1000 V.

Current

1.0 A. at 75 °C.

®

5

+0.2

-0

58.5

± 0.5

Mounting instructions

1. Min. distance from body to soldering point,

4 mm.

2. Max. solder temperature, 350 °C.

3. Max. soldering time, 3.5 sec.

4. Do not bend lead at a point closer than

2 mm. to the body

.

•

Glass passivated junction

•

High current capability

•

The plastic material carries

U/L recognition 94 V-0

•

Terminals: Axial Leads

•

Polarity: Color band denotes cathode

Maximum Ratings, according to IEC publication No. 134

1N

4001GP 4002GP 4003GP 4004GP 4005GP 4006GP 4007GP

V

RRM

I

F(AV)

I

FRM

I

FSM

T

j

T

stg

E

RSM

Peak recurrent reverse voltage (V)

Forward current at Tamb = 75 °C

Recurrent peak forward current

8.3 ms. peak forward surge current

(Jedec Method)

50

100

200

400

600

800

1000

1.0 A

10 A

30 A

– 65 to + 175 °C

20 mJ

Operating temperature range

Storage temperature range

Maximum non repetitive peak

reverse avalanche energy

.

I

R

= 0.5 A ; T

J

= 25 ºC

Electrical Characteristics at Tamb = 25 °C

V

F

I

R

thj-a

Max. forward voltage drop at I

F

= 1 A

Max. reverse current at V

RRM

at 25 °C

at 125 °C

Thermal resistance (I = 10 mm.) Max.

Typ.

1.1 V

5µA

50 µ A

60 °C/W

45 °C/W

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