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5962-01-103-6341

Description
Standard SRAM, 4KX1, 250ns, MOS, CDIP18,
Categorystorage    storage   
File Size278KB,7 Pages
ManufacturerAMD
Websitehttp://www.amd.com
Download Datasheet Parametric View All

5962-01-103-6341 Overview

Standard SRAM, 4KX1, 250ns, MOS, CDIP18,

5962-01-103-6341 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerAMD
package instructionDIP, DIP18,.3
Reach Compliance Codecompliant
Is SamacsysN
Maximum access time250 ns
I/O typeSEPARATE
JESD-30 codeR-XDIP-T18
memory density4096 bit
Memory IC TypeSTANDARD SRAM
memory width1
Number of terminals18
word count4096 words
character code4000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize4KX1
Output characteristics3-STATE
Package body materialCERAMIC
encapsulated codeDIP
Encapsulate equivalent codeDIP18,.3
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
power supply5 V
Certification statusNot Qualified
Filter level38535Q/M;38534H;883B
Minimum standby current4.5 V
Maximum slew rate0.08 mA
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyMOS
Temperature levelMILITARY
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Base Number Matches1

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