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1N5240BTR_NL

Description
Zener Diode, 10V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-35, GLASS PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size109KB,4 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
Download Datasheet Parametric View All

1N5240BTR_NL Overview

Zener Diode, 10V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-35, GLASS PACKAGE-2

1N5240BTR_NL Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeDO-35
package instructionO-LALF-W2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance17 Ω
JEDEC-95 codeDO-35
JESD-30 codeO-LALF-W2
JESD-609 codee3
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT APPLICABLE
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
Nominal reference voltage10 V
surface mountNO
technologyZENER
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT APPLICABLE
Maximum voltage tolerance5%
Working test current20 mA
Base Number Matches1
1N5221B - 1N5263B Zener Diodes
June 2007
1N5221B - 1N5263B
Zener Diodes
Tolerance = 5%
DO-35 Glass case
COLOR BAND DENOTES CATHODE
Absolute Maximum Ratings *
Symbol
P
D
T
STG
T
J
Power Dissipation
Derate above 50°C
Storage Temperature Range
T
A
= 25°C unless otherwise noted
Parameter
Value
500
4.0
-65 to +200
+200
+230
Units
mW
mW°C
°C
°C
°C
Maximum Junction Operating Temperature
Lead Temperature (1/16” from case for 10 seconds)
* These ratings are limiting values above which the serviceability of the diode may be impaired.
** Non-recurrent square wave PW = 8.3ms, Ta = 50 degrees C.
Electrical Characteristics
Device
1N5221B
1N5222B
1N5223B
1N5224B
1N5225B
1N5226B
1N5227B
1N5228B
1N5229B
1N5230B
1N5231B
1N5232B
1N5233B
1N5234B
1N5235B
1N5236B
1N5237B
1N5238B
1N5239B
1N5240B
V
Z
(V) @ I
Z
(Note 1)
Min.
2.28
2.375
2.565
2.66
2.85
3.135
3.42
3.705
4.085
4.465
4.845
5.32
5.7
5.89
6.46
7.125
7.79
8.265
8.645
9.5
Typ.
2.4
2.5
2.7
2.8
3
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6
6.2
6.8
7.5
8.2
8.7
9.1
10
T
A
=25°C unless otherwise noted
Max.
2.52
2.625
2.835
2.94
3.15
3.465
3.78
4.095
4.515
4.935
5.355
5.88
6.3
6.51
7.14
7.875
8.61
9.135
9.555
10.5
Z
Z
(Ω) @ I
Z
(mA)
30
30
30
30
29
28
24
23
22
19
17
11
7.0
7.0
5.0
6.0
8.0
8.0
10
17
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
Z
ZK
(Ω) @ I
ZK
(mA)
1,200
1,250
1,300
1,400
1,600
1,600
1,700
1,900
2,000
1,900
1,600
1,600
1,600
1,000
750
500
500
600
600
600
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
I
R
(μA) @ V
R
(V)
T
C
(%/°C)
-0.085
-0.085
-0.080
-0.080
-0.075
-0.07
-0.065
-0.06
+/-0.055
+/-0.03
+/-0.03
0.038
0.038
0.045
0.05
0.058
0.062
0.065
0.068
0.075
100
100
75
75
50
25
15
10
5.0
2.0
5.0
5.0
5.0
5.0
3.0
3.0
3.0
3.0
3.0
3.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
3.0
3.5
4.0
5.0
6.0
6.5
6.5
7.0
8.0
©2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
1N5221B - 1N5263B Rev. H1

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