RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
1N5391
THRU
1N5399
SILICON RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.5 Amperes
FEATURES
*
*
*
*
Low cost
Low leakage
Low forward voltage drop
High current capability
DO-15
MECHANICAL DATA
*
*
*
*
*
Case: Molded plastic
Epoxy: Device has UL flammability classification 94V-O
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.38 gram
1.0 (25.4)
MIN.
.034 (0.9)
DIA.
.028 (0.7)
.300 (7.6)
.230 (5.8)
.140 (3.6)
DIA.
.104 (2.6)
1.0 (25.4)
MIN.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375” (9.5mm) lead length at T
L
= 70
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note)
Typical Thermal Resistance
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS
(At T
A
= 25
o
C unless otherwise noted)
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 1.5A DC
o
Maximum DC Reverse Current
@T
A
= 25 C
at Rated DC Blocking Voltage
@T
A
= 100
o
C
Maximum Full Load Reverse Current Average, Full Cycle
.375” (9.5mm) lead length at T
L
= 75
o
C
NOTES : Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts
SYMBOL
V
F
1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 UNITS
1.4
Volts
5.0
uAmps
50
30
uAmps
2002-11
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
C
J
R
θ
JA
T
J
, T
STG
1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 UNITS
50
35
50
100
70
100
200
140
200
300
210
300
400
280
400
1.5
50
20
50
-55 to + 150
0
500
350
500
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amps
Amps
pF
C/ W
0
C
I
R
RATING AND CHARACTERISTIC CURVES ( 1N5391 THRU 1N5399 )
FIG. 1 - TYPICAL FORWARD CURRENT
DERATING CURVE
AVERAGE FORWARD CURRENT, (A)
FIG. 2 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
INSTANTANEOUS FORWARD
CURRENT, (A)
1.50
1.25
1.00
.75
.50
.25
0
0
25
50 75 100 125 150 175
LEAD TEMPERATURE, ( )
SURGE CURRENT
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
0.375" (9.5mm) Lead Length
20
10
4
2
1.0
.4
.2
.1
.04
.02
.01
.6
TJ = 25
Pulse Width=300uS
1% Duty Cycle
.8
1.0
1.2
1.4 1.5
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
PEAK FORWARD SURGE CURRENT, (A)
FIG. 3 - MAXIMUM NON-REPETITIVE FORWARD
JUNCTION CAPACITANCE, (pF)
50
40
30
20
10
0
1
200
100
60
40
20
10
6
4
2
1
.1
.2
.4
1.0 2 4
10 20 40 100
REVERSE VOLTAGE, ( V )
TJ = 25
8.3ms Single Half Sine-Wave
(JEDED Method)
2
4 6 8 10 20 40 60 80 100
NUMBER OF CYCLES AT 60Hz
INSTANTANEOUS REVERSE CURRENT, (uA)
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
20
10
TJ = 25
1.0
.1
.01
0
20
40
60 80 100 120 140
PERCENT OF RATED PEAK
REVERSE VOLTAGE, (%)
RECTRON
Embedded System
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