Low Noise Pseudomorphic HEMT
in a Surface Mount Plastic Package
Technical Data
ATF-38143
Features
• Low Noise Figure
• Excellent Uniformity in
Product Specifications
• Low Cost Surface Mount
Small Plastic Package
SOT-343 (4 lead SC-70)
• Tape-and-Reel Packaging
Option Available
Surface Mount Package
SOT-343
Description
Agilent Technologies’s ATF-3814
is a high dynamic range, low
noise, PHEMT housed in a 4-lead
SC-70 (SOT-343) surface mount
plastic package.
Pin Connections and
Package Marking
Specifications
• 0.4 dB Noise Figure
• 16 dB Associated Gain
• 12.0 dBm Output Power at
1 dB Gain Compression
• 22.0 dBm Output 3
rd
Order
Intercept
SOURCE
8Px
1.9 GHz; 2 V, 10 mA (Typ.)
DRAIN
SOURCE
Based on its featured perfor-
mance, ATF-38143 is suitable for
applications in cellular and PCS
handsets, LEO systems, MMDS,
and other systems requiring supe
low noise figure with good
intercept in the 450 MHz to
10 GHz frequency range.
GATE
Note:
Top View. Package marking
provides orientation and identification.
“8P” = Device code
“x” = Date code character. A new
character is assigned for each month, year.
Applications
• Low Noise Amplifier for
Cellular/PCS Handsets
• LNA for WLAN, WLL/RLL,
LEO, and MMDS
Applications
• General Purpose Discrete
PHEMT for Other Ultra Low
Noise Applications
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ATF-38143 Absolute Maximum Ratings
[1]
Symbol
V
DS
V
GS
V
GD
I
DS
P
diss
P
in max
T
CH
T
STG
θ
jc
Parameter
Drain - Source Voltage
[2]
Gate - Source Voltage
Gate Drain Voltage
Drain Current
Total Power Dissipation
[2]
RF Input Power
Channel Temperature
Storage Temperature
Thermal Resistance
[3]
Units
V
V
V
mA
mW
dBm
°C
°C
°C/W
Absolute
Maximum
4.5
-4
-4
I
dss
580
17
160
-65 to 160
165
Notes:
1. Operation of this device above any on
of these parameters may cause
permanent damage.
2. Source lead temperature is 25°C.
Derate 6 mW/
°C
for T
L
> 64°C.
3. Thermal resistance measured using
150°C Liquid Crystal Measurement
method.
Product Consistency Distribution Charts
250
+0.6 V
300
250
200
200
Cpk = 1.59062
Stdev = 0.73 dBm
6 Wafers
Sample Size = 450
I
DS
(mA)
150
0V
-3 Std
150
+3 Std
100
100
50
–0.6 V
50
0
18
0
0
1
2
3
V
DS
(V)
4
5
20
22
OIP3 (dB)
24
26
Figure 1. Typical I-V Curves.
(V
GS
= -0.2 V per step)
180
150
120
Cpk = 4.08938
Stdev = 0.03 dB
6 Wafers
Sample Size = 450
Figure 2. OIP3 @ 2 GHz, 2 V, 10 mA.
LSL=18.5, Nominal=21.99, USL=26.0
160
Cpk = 2.58097
Stdev = 0.14 dB
6 Wafers
Sample Size = 450
120
-3 Std
90
60
+3 Std
80
-3 Std
+3 Std
40
30
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
NF (dB)
0
15
15.5
16
16.5
17
17.5
18
GAIN (dB)
Figure 3. NF @ 2 GHz, 2 V, 10 mA.
LSL=0, Nominal=0.44, USL=0.85
Note:
Distribution data sample size is 450
samples taken from 6 different wafers.
Future wafers allocated to this product
may have nominal values anywhere within
the upper and lower spec limits.
Figure 4. Gain @ 2 GHz, 2 V, 10 mA.
LSL=15.0, Nominal=16.06, USL= 18.0
Measurements made on production test
board. This circuit represents a trade-off
between an optimal noise match and a
realizeable match based on production test
requirements. Circuit losses have been de-
embedded from actual measurements.
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ATF-38143 Electrical Specifications
T
A
= 25°C, RF parameters measured in a test circuit for a typical device
Symbol
I
dss [1]
V
P [1]
I
d
g
m[1]
I
GDO
I
gss
Parameters and Test Conditions
Units Min.
Saturated Drain Current
V
DS
= 1.5 V, V
GS
= 0 V mA
90
Pinchoff Voltage
V
DS
= 1.5 V, I
DS
= 10% of I
dss
V
-0.65
Quiescent Bias Current
V
GS
= -0.54 V, V
DS
= 2 V mA
—
Transconductance
V
DS
= 1.5 V, g
m
= I
dss
/V
P
mmho 180
Gate to Drain Leakage Current
V
GD
= -5 V
µA
Gate Leakage Current
V
GD
= V
GS
= -4 V
µA
—
f = 2 GHz
V
DS
= 2 V, I
DS
= 5 mA
dB
V
DS
= 2 V, I
DS
= 10 mA
V
DS
= 2 V, I
DS
= 20 mA
Noise Figure
f = 900 MHz
V
DS
= 2 V, I
DS
= 5 mA
dB
V
DS
= 2 V, I
DS
= 10 mA
V
DS
= 2 V, I
DS
= 20 mA
f = 2 GHz
V
DS
= 2 V, I
DS
= 5 mA
dB
V
DS
= 2 V, I
DS
= 10 mA
15
V
DS
= 2 V, I
DS
= 20 mA
Associated Gain
[3]
f = 900 MHz
V
DS
= 2 V, I
DS
= 5 mA
dB
V
DS
= 2 V, I
DS
= 10 mA
V
DS
= 2 V, I
DS
= 20 mA
Output 3
rd
Order
Intercept Point
[3]
Input 3
rd
Order
Intercept Point
[3]
1 dB Compressed
Compressed Power
[3]
f = 2 GHz
f = 900 MHz
f = 2 GHz
f = 900 MHz
f = 2 GHz
f = 900 MHz
V
DS
= 2 V, I
DS
= 10 mA
V
DS
= 2 V, I
DS
= 10 mA
V
DS
= 2 V, I
DS
= 10 mA
V
DS
= 2 V, I
DS
= 10 mA
V
DS
= 2 V, I
DS
= 10 mA
V
DS
= 2 V, I
DS
= 10 mA
dBm 18.5
dBm
dBm
dBm
dBm
dBm
NF
Typ.
[2]
Max
118
145
-0.5 -0.35
10
—
230
—
500
30
300
0.6
0.4
0.85
0.3
0.6
0.4
0.3
15.3
16.0
17.0
17.0
19.0
20.5
22.0
22.0
6.0
3.0
12.0
12.0
18
G
a
OIP3
IIP3
P
1dB
Notes:
1. Guaranteed at wafer probe level.
2. Typical value determined from a sample size of 450 parts from 6 wafers.
3. Measurements obtained using production test board described in Figure 5.
Input
50 Ohm
Transmission Line
(0.5 dB loss)
Input
Matching Circuit
Γmag
= 0.380
Γang
= 58.2°
(0.46 dB loss)
DUT
Output
Matching Circuit
Γmag
= 0.336
Γang
= 34.5°
(0.46 dB loss)
50 Ohm
Transmission Line
(0.5 dB loss)
Outpu
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P
1dB
, and OIP3 measure-
ments. This circuit represents a trade-off between an optimal noise match and a realizable match based on production test
board requirements. Circuit losses have been de-embedded from actual measurements.
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ATF-38143 Typical Performance Curves
30
25
OIP3
30
25
OIP3
0.7
0.6
NOISE FIGURE (dB)
60
OIP3, P
1dB
(dBm)
OIP3, P
1dB
(dBm)
20
15
10
5
0
0
10
20
30
40
50
60
CURRENT, I
DS
(mA)
P
1dB
20
15
P
1dB
0.5
0.4
0.3
0.2
0.1
0
10
5
0
0
10
20
30
40
50
CURRENT, I
DS
(mA)
0
10
20
30
40
50
CURRENT, I
DS
(mA)
Figure 6. OIP3 and P
1dB
vs. I
d
at 2 V,
2 GHz.
Figure 7. OIP3 and P
1dB
vs. I
d
at 2 V,
900 MHz.
Figure 8. Noise Figure vs. I
d
at 2
2 GHz.
0.7
0.6
22
21
20
19
18
17
16
15
0
22
21
20
19
18
17
16
15
0
ASSOCIATED GAIN (dB)
0.5
0.4
0.3
0.2
0.1
0
0
10
20
30
40
50
60
CURRENT, I
DS
(mA)
10
20
30
40
50
60
ASSOCIATED GAIN (dB)
NOISE FIGURE (dB)
10
20
30
40
50
CURRENT, I
DS
(mA)
CURRENT, I
DS
(mA)
Figure 9. Noise Figure vs. I
d
at 2 V,
900 MHz.
Figure 10. Associated Gain vs. I
d
at 2 V,
2 GHz.
Figure 11. Associated Gain vs. I
d
900 MHz.
Notes:
1. Measurements made on a fixed tuned production test board that was tuned for optimal gain match with reasonable noise figure at 2
10 mA bias. This circuit represents a trade-off between an optimal noise match, maximum gain match and a realizable match based
production test board requirements. Circuit losses have been de-embedded from actual measurements.
2. P
1dB
measurements are performed with passive biasing. Quiescent drain current, I
DSQ
, is set with zero RF drive applied. As P
1dB
is
approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of I
DSQ
the devic
is running closer to class B as power output approaches P
1dB
. This results in higher P
1dB
and higher PAE (power added efficiency)
when compared to a device that is driven by a constant current source as is typically done with active biasing.
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ATF-38143 Typical Performance Curves,
continued
0.9
0.8
25
0.7
0.6
F
min
(dB)
G
a
(dB)
30
1.6
1.4
G
a
F
min
1.2
G
a
(dB)
30
25
20
15
10
5
0
0
2
4
6
8
10
12
FREQUENCY (GHz)
5 mA
10 mA
20 mA
20
15
10
5 mA
10 mA
20 mA
1.0
0.8
0.6
0.4
0.5
0.4
0.3
0.2
0.1
0
0
2
4
6
8
FREQUENCY (GHz)
5
0
0
1
2
3
4
5
–40°C
+25°C
+85°C
0.2
0
7
6
FREQUENCY (GHz)
Figure 12. F
min
vs. Frequency and
Current at 2V.
Figure 13. F
min
and G
a
vs. Frequency
and Temperature at 2 V, 10 mA.
Figure 14. Associated Gain vs.
Frequency and Current at 2V.
26
GAIN (dB), P
1dB
and OIP3 (dBm)
30
25
20
1.4
1.2
1.0
0.8
NF (dB)
GAIN (dB), P
1dB
and OIP3 (dBm)
30
25
20
15
10
5
0
0
10
20
30
40
50
60
CURRENT, I
DS
(mA)
P
1dB
OIP3
Gain
NF
1.
24
P
1dB,
OIP3 (dBm)
1.
22
20
18
16
14
12
10
0
2000
4000
6000
8000
FREQUENCY (MHz)
–40°C
+25°C
+85°C
1.
0.
15
0.6
10
5
0
0
10
20
30
40
50
60
CURRENT, I
DS
(mA)
P
1dB
OIP3
Gain
NF
0.
0.4
0.2
0
0.
0.
0
Figure 15. P
1dB
and OIP3 vs. Frequency
and Temperature at 2 V, 10 mA.
Figure 16. NF, Gain, P
1dB
and OIP3 vs.
I
DS
at 2V, 3.9 GHz.
Figure 17. NF, Gain, P
1dB
and OIP3 vs
I
DS
at 2V, 5.8 GHz.
Notes:
1. P
1dB
measurements are performed with passive biasing. Quiescent drain current, I
DSQ
, is set with zero RF drive applied. As P
1dB
is
approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of I
DSQ
the devic
is running closer to class B as power output approaches P
1dB
. This results in higher P
1dB
and higher PAE (power added efficiency)
when compared to a device that is driven by a constant current source as is typically done with active biasing.
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