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1SS383

Description
DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, USQ, 1-2U1A, 4 PIN, Signal Diode
CategoryDiscrete semiconductor    diode   
File Size235KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric View All

1SS383 Overview

DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, USQ, 1-2U1A, 4 PIN, Signal Diode

1SS383 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerToshiba Semiconductor
package instructionUSQ, 1-2U1A, 4 PIN
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
ConfigurationSEPARATE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.6 V
JESD-30 codeR-PDSO-G4
Maximum non-repetitive peak forward current1 A
Number of components2
Number of terminals4
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.1 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage15 V
Maximum reverse current5 µA
Reverse test voltage10 V
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

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