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BSM15GD120DN2E3224

Description
Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-17
CategoryDiscrete semiconductor    The transistor   
File Size76KB,2 Pages
ManufacturerEUPEC [eupec GmbH]
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BSM15GD120DN2E3224 Overview

Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-17

BSM15GD120DN2E3224 Parametric

Parameter NameAttribute value
package instructionECONOPACK-17
Reach Compliance Codeunknown
Is SamacsysN
Shell connectionISOLATED
Maximum collector current (IC)25 A
Collector-emitter maximum voltage1200 V
ConfigurationBRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X17
Number of components6
Number of terminals17
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)145 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Transistor component materialsSILICON
Nominal off time (toff)470 ns
Nominal on time (ton)100 ns
VCEsat-Max3.2 V
Base Number Matches1
BSM 15 GD120DN2E3224
Circuit Diagram
Package Outlines
Dimensions in mm
Weight: 180 g
1
Oct-20-1997

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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