BUK78150-55A,135 datasheet, PDF

BUK78150-55A,135: DescriptionBUK78150-55A - N-channel TrenchMOS standard level FET SC-73 4-Pin; CategoryDiscrete semiconductor The transistor; File Size745KB，13 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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BUK78150-55A,135 Overview

BUK78150-55A - N-channel TrenchMOS standard level FET SC-73 4-Pin

Parameter Name	Attribute value
Brand Name	NXP Semiconductor
Is it Rohs certified?	conform to
Maker	NXP
Parts packaging code	SC-73
package instruction	PLASTIC, SC-73, 3 PIN
Contacts	4
Manufacturer packaging code	SOT223
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Avalanche Energy Efficiency Rating (Eas)	25 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	55 V
Maximum drain current (Abs) (ID)	5.5 A
Maximum drain current (ID)	5.5 A
Maximum drain-source on-resistance	0.15 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G4
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	8 W
Maximum pulsed drain current (IDM)	22 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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