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TPSMB110A

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CategoryDiscrete semiconductor    Transient suppression diode   
File Size971KB,3 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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TPSMB110A Parametric

Parameter NameAttribute value
Case StyleSMB
Ppk(W)600
MIN_(V)104.50
MAX_(V)115.50
Vwm_(V)94.0
Ir_(uA)1
Ippm_(A)3.95
Vc_(V)152.0
classDiodes
TPSMB Series
Breakdown Voltage: 13 to 200 V
Peak Pulse Power: 600 W
Features
Surface Mount
Transient Voltage Suppressors
SMB/ DO-214AA
0.191 [4.85]
0.171 [4.35]
Glass passivated chip
600 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty
cycle):0.01 %
High reliability application and automotive
grade AEC Q101 qualified
Low leakage
Uni and Bidirectional unit
Excellent clamping capability
Very fast response time
RoHS compliant
Case: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Solderable per MIL-STD-750, method
2026
Polarity: Color band denotes cathode end
except Bipolar
Mounting position: Any
0.087 [2.20]
0.078 [1.96]
0.148 [3.75]
0.130 [3.30]
0.012 [0.30]
0.006 [0.15]
0.096 [2.44]
0.084 [2.13]
0.008 [0.20]
0
[0.00]
0.217 [5.50]
0.201 [5.10]
0.059 [1.51]
0.030 [0.75]
Mechanical Data
Maximum Ratings(T
A
=25℃ unless otherwise noted)
Parameter
(1)
Peak power dissipation with a 10/1000μs waveform
Symbol
P
PP
Value
600
Unit
W
A
W
A
V
°C
°C
(1)
I
PP
See Next Table
Peak pulse current with a 10/1000μs waveform
Power dissipation on infinite heatsink at T
L
= 75 °C
P
D
5.0
Peak forward surge current, 8.3 ms single half sine-wave
I
FSM
100
unidirectional only
(2)
Maximum instantaneous forward voltage at 25 A for
V
F
3.5
unidirectional only
Operating junction and storage temperature range
- 55 to +175
(V
BR
47V)
T
J
, T
STG
Operating junction and storage temperature range
- 55 to +150
(V
BR
> 47V)
Note:
(1)Non-repetitive current pulse per Fig.5 and derated above T
A
= 25 °C per Fig.1
(2)Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
ht
t
p
:
//
Revision:20170701-P1
www.lgesem i
.c
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mail:lge@lgesemi.com
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