Welding Diodes
Features
●
●
●
Super small volume,large current.
Ultra-thin silicon wafe manufacturing,protectiontt
technology.
Thin
ceramic package or encapsulation without ceramic package.
Special multilayer metal ohmic contact.
High-power avalanche featues.
Large surge current test.
●
●
●
●
R
F
Can be directly connected in parallel with ultra-low threshold voltage
VFO,low slope resistor R
F.
Rthjc Low junction case thermal resistance Rthjc.
Used for reduced volume and greatil increase current.
●
●
Ceramic package
I
F(AV)
@Tc
Type
=85℃
A
ZHA7100
ZHA12000
ZHA16000
7100
12000
16000
VRRM
V
200~600
200~600
200~600
I
FSM
@T
jm
&10ms
kA
50
85
120
V
FM
@I
FM
&T
C
=25℃
V
1.05
1.02
1.09
A
5000
8000
12000
V
FO
@T
jm
V
0.74
0.75
0.75
r
F
@T
jm
mΩ
0.025
0.019
0.017
Qrr
T
jm
℃
175
175
175
Rth(j-c)
K/W
0.010
0.006
0.004
F±10%
KN
30
50
70
ZTA50
ZTA63
ZTA76
Outline
μC
≤400
≤400
≤400
Pressure package without case
I
F(AV)
@Tc
Type
=85℃
A
ZHA9200
ZHA10500
ZHA13500
ZHA18000
9200
10500
13500
18000
V
200~600
200~600
200~600
200~600
VRRM
I
FSM
@T
jm
&10ms
kA
60
70
85
135
V
FM
@I
FM
&T
C
=25℃
V
1.03
1.01
0.97
1.09
A
2=8000
8000
10000
12000
V
FO
@T
jm
V
0.78
0.81
0.76
0.78
r
F
@T
jm
mΩ
0.031
0.026
0.021
0.018
Qrr
T
jm
℃
175
175
175
175
Rth(j-c)
K/W
0.0056
0.005
0.004
0.003
F±10%
Outline
KN
33
38
50
70
ZTA53
ZTA56
ZTA63
ZTA75
μC
≤300
≤300
≤300
≤300
Revision:20190101-P1
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t
p
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