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ZVN2110A

Description
Small Signal Field-Effect Transistor, 0.32A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size56KB,3 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
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Small Signal Field-Effect Transistor, 0.32A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZVN2110A Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerDiodes Incorporated
Parts packaging codeTO-92
package instructionIN-LINE, O-PSIP-W3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time17 weeks
Samacsys Confidence4
Samacsys StatusReleased
Samacsys PartID772063
Samacsys Pin Count3
Samacsys Part CategoryMOSFET (N-Channel)
Samacsys Package CategoryOther
Samacsys Footprint NameE-Line
Samacsys Released Date2018-09-26 10:09:20
Is SamacsysN
ConfigurationSINGLE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)0.32 A
Maximum drain current (ID)0.32 A
Maximum drain-source on-resistance4 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)8 pF
JESD-30 codeO-PSIP-W3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.7 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
Transistor component materialsSILICON
Base Number Matches1

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Index Files: 1045  2805  1577  2517  1260  22  57  32  51  26 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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