Power Field-Effect Transistor, 1.7A I(D), 100V, 0.23ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Parts packaging code | SOT |
| package instruction | SMALL OUTLINE, R-PDSO-G8 |
| Contacts | 8 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Factory Lead Time | 17 weeks |
| Is Samacsys | N |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V |
| Maximum drain current (Abs) (ID) | 2.4 A |
| Maximum drain current (ID) | 1.7 A |
| Maximum drain-source on-resistance | 0.23 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PDSO-G8 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 2 |
| Number of terminals | 8 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | N-CHANNEL AND P-CHANNEL |
| Maximum power dissipation(Abs) | 2.6 W |
| Maximum pulsed drain current (IDM) | 9.4 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Matte Tin (Sn) |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 40 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
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