1SMA4737 thru 1SMA200Z
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Built-in strain relief
- Ideal for automated placement
- Glass passivated junction
- Low inductance
- Typical IR less than 1μA above 11V
- Moisture sensitivity level : level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Surface Mount Silicon Zener Diodes
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.06 g (approximately)
DO-214AC (SMA)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Power dissipation, R
THJA
<30K/W, T
A
=60℃
Power dissipation, R
THJA
<100K/W, T
A
=25℃
Non repetitive peak power dissipation(Note 1)
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Operating junction temperature range
Storage temperature range
SYMBOL
P
D
P
D
P
ZSM
I
FSM
T
J
T
STG
Value
1
1.25
60
60
- 55 to +150
- 55 to +150
UNIT
Watts
Watts
Watts
A
O
O
C
C
Note 1: Non Repetitive Peak surge PD Test Condition: tp=100μs sq. pulse, T
A
=25℃ prior to surge
ORDERING INFORMATION
PART NO.
AEC-Q101
QUALIFIED
PACKING
CODE
R3
R2
1SMAxxxx
(Note 1)
Prefix "H"
M2
F3
F2
F4
Note 1: "xxxx" defines voltage from 7.5V (1SMA4737) to 200V (1SMA200Z)
Suffix "G"
GREEN COMPOUND
CODE
SMA
SMA
SMA
Folded SMA
Folded SMA
Folded SMA
1,800 / 7" Plastic reel
7,500 / 13" Paper reel
7,500 / 13" Plastic reel
1,800 / 7" Plastic reel
7,500 / 13" Paper reel
7,500 / 13" Plastic reel
PACKAGE
PACKING
EXAMPLE
PREFERRED P/N
1SMA4737 R3
1SMA4737 R3G
1SMA4737HR3
PART NO.
1SMA4737
1SMA4737
1SMA4737
H
AEC-Q101
QUALIFIED
PACKING CODE
R3
R3
R3
G
Green compound
AEC-Q101 qualified
GREEN COMPOUND
CODE
DESCRIPTION
Document Number: DS_D1405058
Version: L14
1SMA4737 thru 1SMA200Z
Taiwan Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
Nominal
Zener Voltage
Device
(Note 1)
Device
Marking
code
Vz@Iz
T
V
(Note 2)
(Note 3)
1SMA4737
1SMA4738
1SMA4739
1SMA4740
1SMA4741
1SMA4742
1SMA4743
1SMA4744
1SMA4745
1SMA4746
1SMA4747
1SMA4748
1SMA4749
1SMA4750
1SMA4751
1SMA4752
1SMA4753
1SMA4754
1SMA4755
1SMA4756
1SMA4757
1SMA4758
1SMA4759
1SMA4760
1SMA4761
1SMA4762
1SMA4763
1SMA4764
1SMA110Z
1SMA120Z
1SMA130Z
1SMA150Z
1SMA160Z
1SMA180Z
1SMA200Z
Notes:
1. Tolerance and Type Number Designation. The type numbers losted have a standard tolerance on the nominal zener voltage of ±5%
2. Specials Available Include:
A. Nominal zener voltages between the voltages shown and tighter voltage tolerances
B. Matched sets
3. Zener Voltage (Vz) Measurement. Guarantees the zener voltage when messured at 90 seconds while maintaining the lead temperature(T
L
)
at 30℃±1℃, from the diode body
4. Zener Impedance (Zz) Derivation. The zener impedance is derives from the 60 cycle AC voltage, which results when an accurrent having and
rms value equal to 10% of the DC zener current (I
ZT
or I
ZK
) is superimposed on I
ZT
or I
ZK
5. Surge Current (I
R
) Non-Repetitive. The rating listd in the electrical chatacteristics table is maximum peak, non-repetitive, reverse surge current
of 1/2 square wave or equivalent sine wave pulse of 1/120 second duration superimposed on the test current, I
ZT
per JEDEC registration;
however, actual device capability is as described in Figure 10.
Document Number: DS_D1405058
Version: L14
737A
738A
739A
740A
741A
742A
743A
744A
745A
746A
747A
748A
749A
750A
751A
752A
753A
754A
755A
756A
757A
758A
759A
760A
761A
762A
763A
764A
110A
120A
130A
150A
160A
180A
200A
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
34
31
28
25
23
21
19
17
15.5
14.0
12.5
11.5
10.5
9.5
8.5
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.7
3.3
3.0
2.8
2.5
2.3
2.0
1.9
1.7
1.6
1.4
1.2
4
4.5
5
7
8
9
10
14
16
20
22
23
25
35
40
45
50
60
70
80
95
110
125
150
175
200
250
350
450
550
700
1000
1100
1200
1500
700
700
700
700
700
700
700
700
700
750
750
750
750
750
1000
1000
1000
1000
1500
1500
1500
2000
2000
2000
2000
3000
3000
3000
4000
4500
5000
6000
6500
7000
8000
0.50
0.50
0.50
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Test
Current
I
ZT
mA
Z
ZT
@I
ZT
Ω
Ω
Zener Impedance
Z
ZK
@I
ZK
mA
μA
Max.
5
5
5
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
5.0
6.0
7.0
7.6
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
47.1
51.7
56.0
62.2
69.2
76.0
83.6
91.2
98.8
114.0
121.6
136.8
152.0
605
550
500
454
414
380
344
304
285
250
225
205
190
170
150
135
125
115
110
95
90
80
70
65
60
55
50
45
-
-
-
-
-
-
-
Leakage Current
I
R
@V
R
V
Surge current
T
A
=25℃
I
R
mA
1SMA4737 thru 1SMA200Z
Taiwan Semiconductor
FIG. 1 POWER TEMPERATURE DERATING CURVE
1.5
1.25
1
0.75
0.5
0.25
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE(℃)
FIG. 2 TYPICAL FORWARD CHARACTERISTICS
1000
MINIMUM
MAXIMUM
P
D
, MAXIMUM POWER DISSIPATION
(WATTS)
IF, FORWARD CURRENT (mA)
100
70℃
10
150℃
25℃
0℃
1
0.4
0.5
0.6
0.7
0.8
0.9
V
F
, FORWARD VOLTAGE (V)
1
1.1
1000
Zz, DYNAMIC IMPEDANCE (Ω)
FIG.3 EFFECT OF ZENER CURRENT
ON ZENER IMPEDANCE
Iz(rms)=0.1 Iz(dc)
f=1KHz
47V
FIG.5 TYPICAL LEAKAGE CURRENT
10000
TYPICAL LEAKAGE CURRENT
AT 80% OF NOMINAL
BREAKDOWN VOLTAGE
100
1000
27V
10
100
0.8V
1
0
1
10
100
IR, LEAKAGE CURRENT(μA)
10
Iz, ZENER CURRENT (mA)
FIG.4 EFFECT OF ZENER VOLTAGE
ON ZENER IMPEDANCE
1
1000
Iz = 1mA
Zz, DYNAMIC IMPEDANCE (Ω)
Iz(rms)=0.1 Iz(dc)
f=1KHz
0.1
125℃
100
5 mA
20mA
10
0.01
25℃
1
1
10
100
0.001
3
4
5
6
7
8
9
10
11
12
13
14
15
Iz, ZENER CURRENT(mA)
Vz, NOMINAL ZENER VOLTAGE(V)
Document Number: DS_D1405058
Version: L14
1SMA4737 thru 1SMA200Z
Taiwan Semiconductor
FIG.6 TYPICAL CAPACITANCE versus Vz
1000
12
10
θVz,
TEMPERATURE COEFFICIENT
(mV/℃)
C, CAPACITANCE(pF)
8
6
4
2
0
-2
-4
2
3
FIG. 7 TEMPERATURE COEFFICIENTS
a-RANGE FOR UNITS TO 12 VOLTS
0V BIAS
100
1.0V BIAS
RANGE Vz@ IZT
50% OF BREAKDOWN
10
1
10
Vz, FORWARD VOLTAGE (V)
100
4
5
6
7
8
9
10
11
12
Vz, ZENER VOLTAGE(V)
FIG.8 TEMPERATURE COEFFICIENTS
100
θVz,
TEMPERATURE COEFFICIENT
(mV/℃)
b-RANGE FOR UNITS 12 TO 100 VOLTS
θVz,
TEMPERATURE COEFFICIENT
(mV/℃)
4
6
Vz@ IZT
FIG. 9 EFFECT OF ZENER CURRENT
0.01mA
1 mA
2
20mA
0
10
RANGE Vz@ IZT
-2
1
10
Vz, ZENER VOLTAGE(V)
100
-4
3
3.5
4
NOTE:BELOW 3 VOLTAGE ABOVE a
VOLTS CHANGES IN ZENER CURRENT
NOT AFFECT TEMPERATURE
4.5
5
5.5
6
6.5
7
7.5
8
Vz, ZENER VOLTAGE(V)
FIG.10 MAXIMUM SURGE POWER
100
P
PK
, PEAK SURGE POWER WATTS
5% DUTY CYCLE
11V-91V NON-REPETITIVE
RECTANGULAR WAVEFORM
TA=25℃ PRIOR TO INITIAL PULSE
0.8V-10V NON-REPETITIVE
10
10% DUTY CYCLE
20% DUTY CYCLE
1
0.01
0.1
1
PW, PULSE WIDTH (ms)
10
100
1000
Document Number: DS_D1405058
Version: L14
1SMA4737 thru 1SMA200Z
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
Unit (mm)
Min
1.27
4.06
2.29
1.99
0.90
4.95
0.10
0.15
Max
1.58
4.60
2.83
2.50
1.41
5.33
0.20
0.31
Unit (inch)
Min
0.050
0.160
0.090
0.078
0.035
0.195
0.004
0.006
Max
0.062
0.181
0.111
0.098
0.056
0.210
0.008
0.012
DIM.
A
B
C
D
E
F
G
H
SUGGESTED PAD LAYOUT
Symbol
A
B
C
D
E
Unit (mm)
1.68
1.52
3.93
2.41
5.45
Unit (inch)
0.066
0.060
0.155
0.095
0.215
MARKING DIAGRAM
P/N =
G=
YW =
F=
Device Marking Code
Green Compound
Date Code
Factory Code
Document Number: DS_D1405058
Version: L14
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