Insulated Gate Bipolar Transistor, 114A I(C), 600V V(BR)CES, N-Channel, MTP, 12 PIN
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | International Rectifier ( Infineon ) |
| package instruction | FLANGE MOUNT, R-XUFM-P12 |
| Contacts | 12 |
| Reach Compliance Code | unknown |
| Other features | UL APPROVED, LOW CONDUCTION LOSS |
| Shell connection | ISOLATED |
| Maximum collector current (IC) | 114 A |
| Collector-emitter maximum voltage | 600 V |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
| Gate-emitter maximum voltage | 20 V |
| JESD-30 code | R-XUFM-P12 |
| Number of components | 2 |
| Number of terminals | 12 |
| Maximum operating temperature | 125 °C |
| Package body material | UNSPECIFIED |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 658 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | PIN/PEG |
| Terminal location | UPPER |
| transistor applications | POWER CONTROL |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |