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50MT060WHT

Description
Insulated Gate Bipolar Transistor, 114A I(C), 600V V(BR)CES, N-Channel, MTP, 12 PIN
CategoryDiscrete semiconductor    The transistor   
File Size131KB,7 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
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50MT060WHT Overview

Insulated Gate Bipolar Transistor, 114A I(C), 600V V(BR)CES, N-Channel, MTP, 12 PIN

50MT060WHT Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionFLANGE MOUNT, R-XUFM-P12
Contacts12
Reach Compliance Codeunknown
Other featuresUL APPROVED, LOW CONDUCTION LOSS
Shell connectionISOLATED
Maximum collector current (IC)114 A
Collector-emitter maximum voltage600 V
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-P12
Number of components2
Number of terminals12
Maximum operating temperature125 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)658 W
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationUPPER
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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