56DN06B01ELEMXPSA1 datasheet, PDF

56DN06B01ELEMXPSA1: DescriptionRectifier Diode, 1 Phase, 1 Element, 8400A, 600V V(RRM), Silicon,; CategoryDiscrete semiconductor diode; File Size198KB，8 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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56DN06B01ELEMXPSA1 Overview

Rectifier Diode, 1 Phase, 1 Element, 8400A, 600V V(RRM), Silicon,

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	O-XXSS-X2
Reach Compliance Code	compliant
ECCN code	EAR99
Factory Lead Time	10 weeks
application	GENERAL PURPOSE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.98 V
JESD-30 code	O-XXSS-X2
Maximum non-repetitive peak forward current	70000 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	180 °C
Minimum operating temperature	-40 °C
Maximum output current	8400 A
Package body material	UNSPECIFIED
Package shape	ROUND
Package form	SPECIAL SHAPE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	600 V
Maximum reverse current	100000 µA
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UNSPECIFIED
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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