BCW67ALEADFREE datasheet, PDF - EEWORLD Datasheet

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BCW67ALEADFREE: DescriptionSmall Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size323KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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BCW67ALEADFREE Overview

Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3

BCW67ALEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Central Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.8 A
Collector-emitter maximum voltage	32 V
Configuration	SINGLE
Minimum DC current gain (hFE)	35
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	10
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Base Number Matches	1

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BCW67 SERIES

BCW68 SERIES

SURFACE MOUNT

PNP SILICON TRANSISTOR

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BCW67 and BCW68

Series types are PNP Silicon Transistors manufactured

by the epitaxial planar process, epoxy molded in a

surface mount package, designed for general purpose

switching and amplifier applications.

MARKING CODE: SEE MARKING CODE TABLE

ON FOLLOWING PAGE

SOT-23 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Conitinuous Collector Current

Peak Collector Current

Continuous Base Current

Peak Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL

SYMBOL

ICBO

IEBO

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

SYMBOL

VCBO

VCEO

VEBO

ICM

IBM

TJ, Tstg

BCW67

BCW68

UNITS

°C

°C/W

UNITS

µA

MHz

BCW67C

BCW68H

MIN MAX

180

250

630

100

5.0

800

1.0

100

200

350

-65 to +150

357

MAX

CHARACTERISTICS:

(TA=25°C unless

TEST CONDITIONS

VCB=Rated VCEO

VCB= Rated VCEO, TA=150°C

VEB=4.0V

IC=10µA (BCW67)

IC=10µA (BCW68)

IC=10mA (BCW67)

IC=10mA (BCW68)

IE=10µA

IC=100mA, IB=10mA

IC=500mA, IB=50mA

IC=100mA, IB=10mA

IC=500mA, IB=50mA

VCE=5.0V, IC=50mA, f=20MHz

VCB=10V, IE=0, f=1.0MHz

VEB=0.5V, IC=0, f=1.0MHz

otherwise noted)

MIN

TYP

5.0

0.3

0.7

1.25

2.0

200

6.0

BCW67B

BCW68G

MIN

MAX

120

160

400

hFE

VCE=10V, IC=100µA

VCE=1.0V, IC=10mA

VCE=1.0V, IC=100mA

VCE=2.0V, IC=500mA

BCW67A

BCW68F

MIN MAX

100

250

R2 (20-November 2009)

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