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BZT52B36-GRHG

Description
Zener Diode,
CategoryDiscrete semiconductor    diode   
File Size455KB,6 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

BZT52B36-GRHG Overview

Zener Diode,

BZT52B36-GRHG Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
Reach Compliance Codecompliant
ECCN codeEAR99
JESD-609 codee3
Humidity sensitivity level1
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Terminal surfaceMatte Tin (Sn)
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
BZT52B2V4-G - BZT52B43-G
Taiwan Semiconductor
Small Signal Product
2% Zener Voltage Tolerance Zener Diode
FEATURES
- Wide zener voltage range selection: 2.4V to 43V
- Surface mount device type
- Moisture sensitivity level (MSL): 1
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
SOD-123
MECHANICAL DATA
- Case: Bend lead SOD-123 small outline plastic package
- Terminal: Matte tin plated, lead free, solderable
per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Polarity: Indicated by cathode band
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Forward Voltage (Note2)
Power Dissipation (Note1)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
@ I
F
= 10mA
SYMBOL
V
F
P
D
R
θJA
T
J
T
STG
VALUE
0.9
410
357
150
- 55 to + 150
UNIT
V
mW
°C/W
°C
°C
Notes: 1. Device mounted on ceramic PCB: 7.6mm X 9.4mm X 0.87mm with pad areas 25mm
2
2. Short duration test pulse used to minimize self-heating effect
Version: E1601
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