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BSO307N

Description
SIPMOS Small-Signal-Transistor
CategoryDiscrete semiconductor    The transistor   
File Size377KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BSO307N Overview

SIPMOS Small-Signal-Transistor

BSO307N Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInfineon
Parts packaging codeSOT
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)55 mJ
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)4.2 A
Maximum drain current (ID)5 A
Maximum drain-source on-resistance0.05 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
JESD-609 codee0
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)2 W
Maximum pulsed drain current (IDM)20 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
Preliminary Data
SIPMOS
Small-Signal-Transistor
Features
Dual N channel
BSO 307N
Product Summary
Drain source voltage
Drain-Source on-state resistance
Continuous drain current
V
DS
R
DS(on)
I
D
30
0.05
5
V
A
Enhancement mode
Avalanche rated
Logic Level
dv/dt rated
Type
BSO 307 N
Parameter
Continuous drain current,
one channel active
Package
SO 8
Symbol
Ordering Code
Q67000-S4012
Value
5
20
55
5
0.2
6
mJ
A
mJ
kV/µs
Unit
A
Maximum Ratings,
at
T
j = 25 ˚C, unless otherwise specified
I
D
I
Dpulse
E
AS
I
AR
E
AR
dv/dt
T
A
= 25 ˚C
Pulsed drain current,
one channel active
T
A
= 25 ˚C
Avalanche energy, single pulse
I
D
= 5 A,
V
DD
= 25 V,
R
GS
= 25
Avalanche current,periodic limited by
T
jmax
Avalanche energy, periodic limited by
T
jmax
Reverse diode dv/dt
I
S
= 5 A,
V
DS
= 24 V, di/dt = 200 A/µs,
T
jmax
= 150 ˚C
Gate source voltage
Power dissipation,
one channel active
V
GS
P
tot
T
j
T
stg
±20
2
-55...+150
-55 ... +150
55/150/56
V
W
˚C
T
A
= 25 ˚C
Operating temperature
Storage temperature
IEC climatic category; DIN IEC 68-1
Data Sheet
1
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