Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU508DW
DESCRIPTION
・With
TO-247 package
・High
voltage,high speed
・With
integrated efficiency diode
APPLICATIONS
・For
use in horizontal deflection circuits of
colour TV receivers.
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(T
C
=25
℃)
SYMBOL
V
CBO
V
CEO
I
C
I
CP
I
B
I
BM
P
tot
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Collector current (DC)
Collector current (Pulse)
Base current (DC)
Base current (Pulse)
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
VALUE
1500
700
8
15
4
6
125
150
-65~150
UNIT
V
V
A
A
A
A
W
℃
℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
BU508DW
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage
I
C
=100mA ;I
B
=0,L=25mH
700
V
V
CE
(sat)
Collector-emitter saturation voltage
I
C
=4.5A ;I
B
=1.6A
1.0
V
V
BE
(sat)
I
CES
Base-emitter saturation voltage
I
C
=4.5A ;I
B
=2A
V
CE
=1500V
,
V
BE
=0
T
j
=125℃
V
EB
=5.0V; I
C
=0
1.1
1.0
2.0
300
V
Collector cut-off current
mA
I
EBO
Emitter cut-off current
mA
h
FE
DC current gain
I
C
=500mA ; V
CE
=5V
10
30
V
F
Diode forward voltage
I
F
=4.5A
1.6
2.0
V
f
T
Transition frequency
I
E
=0.1A ; V
CE
=5V
7
MHz
C
C
Collector capacitance
V
CB
=10V;I
E
=0;f=1.0MHz
125
pF
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BU508DW
Fig.2 Outline dimensions
3