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BU508DW

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size44KB,3 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric View All

BU508DW Overview

Transistor

BU508DW Parametric

Parameter NameAttribute value
MakerInchange Semiconductor
package instruction,
Reach Compliance Codeunknown
Is SamacsysN
Base Number Matches1
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU508DW
DESCRIPTION
・With
TO-247 package
・High
voltage,high speed
・With
integrated efficiency diode
APPLICATIONS
・For
use in horizontal deflection circuits of
colour TV receivers.
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(T
C
=25
℃)
SYMBOL
V
CBO
V
CEO
I
C
I
CP
I
B
I
BM
P
tot
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Collector current (DC)
Collector current (Pulse)
Base current (DC)
Base current (Pulse)
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
VALUE
1500
700
8
15
4
6
125
150
-65~150
UNIT
V
V
A
A
A
A
W

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