Preliminary Data Sheet I2143 11/97
SAFE
IR
Series
10TTS08
PHASE CONTROL SCR
V
T
Description/Features
The 10TTS08
SAFE
IR
series of silicon controlled
rectifiers are specifically designed for medium
power switching and phase control applications.
The glass passivation technology used has reli-
able operation up to 125° C junction temperature.
Typical applications are in input rectification and
crow-bar (soft start) and these products are
designed to be used with International Rectifier
input diodes, switches and output rectifiers which
are available in identical package outlines.
< 1.15V @ 6.5A
I
TSM
= 140A
V
RRM
= 800V
Output Current in Typical Applications
Applications
Capacitive input filter T
A
= 55°C, T
J
= 125°C,
common heatsink of 1°C/W
Single-phase Bridge
13.5
Three-phase Bridge Units
17
A
Major Ratings and Characteristics
Characteristics
I
T(AV)
Sinusoidal
waveform
I
T(RMS)
V
RRM
/V
DRM
I
TSM
V
T
dv/dt
di/dt
T
J
range
@ 6.5 A, T
J
= 25°C
10
800
140
1.15
150
100
- 40 to 125
A
V
A
V
V/µs
A/µs
°C
Package Outline
Units
A
10TTS08
6.5
TO-220AC
Also available in SMD-220 package (series 10TTS08S)
1
10TTS08
SAFE
IR
Series
Preliminary Data Sheet I2143 11/97
Voltage Ratings
Part Number
10TTS08
V
RRM
, maximum
peak reverse voltage
V
800
V
DRM
, maximum
peak direct voltage
V
800
I
RRM
/
I
DRM
125°C
mA
1.0
Absolute Maximum Ratings
Parameters
I
T(AV)
Max. Average On-state Current
I
T(RMS)
Max. RMS On-state Current
I
TSM
Max. Peak One Cycle Non-Repetitive
Surge Current
I
2
t
Max. I
2
t for fusing
10TTS08
6.5
10
120
140
72
100
Units
A
Conditions
@ T
C
= 112° C, 180° conduction half sine wave
A
10ms Sine pulse, rated V
RRM
applied,T
J
= 125°C
10ms Sine pulse, no voltage reapplied, T
J
= 125°C
A
2
s
10ms Sine pulse, rated V
RRM
applied,T
J
= 125°C
10ms Sine pulse, no voltage reapplied, T
J
= 125°C
I
2
√t
V
TM
r
t
Max. I
2
√t
for fusing
Max. On-state Voltage Drop
On-state slope resistance
1000
1.15
17.3
0.85
0.05
1.0
30
50
150
100
A
2
√s
V
mΩ
V
mA
t = 0.1 to 10ms, no voltage reapplied,T
J
= 125°C
@ 6.5A, T
J
= 25°C
T
J
= 125°C
V
T(TO)
Threshold Voltage
I
RM
/I
DM
Max.Reverse and Direct
Leakage Current
I
H
I
L
Typ. Holding Current
Max. Latching Current
T
J
= 25 °C
T
J
= 125 °C
V
R
= rated V
RRM
/ V
DRM
mA
mA
V/µs
A/µs
Anode Supply = 6V, Resistive load, Initial I
T
=1A
Anode Supply = 6V, Resistive load
T
J
= 25°C
dv/dt Max. rate of rise of off-state Voltage
di/dt
Max. rate of rise of turned-on Current
2
10TTS08
SAFE
IR
Series
Preliminary Data Sheet I2143 11/97
Triggering
Parameters
P
GM
Max. peak Gate Power
10TTS08
8.0
2.0
1.5
10
20
15
10
Units
W
Conditions
P
G(AV)
Max. average Gate Power
+ I
GM
Max. paek positive Gate Current
- V
GM
Max. paek negative Gate Voltage
I
GT
Max. required DC Gate Current
to trigger
A
V
mA
Anode supply = 6V, resistive load, T
J
= - 65°C
Anode supply = 6V, resistive load, T
J
= 25°C
Anode supply = 6V, resistive load, T
J
= 125°C
V
Anode supply = 6V, resistive load, T
J
= - 65°C
Anode supply = 6V, resistive load, T
J
= 25°C
Anode supply = 6V, resistive load, T
J
= 125°C
T
J
= 125°C, V
DRM
= rated value
mA
T
J
= 125°C, V
DRM
= rated value
V
GT
Max. required DC Gate Voltage
to trigger
1.2
1
0.7
V
GD
I
GD
Max. DC Gate Voltage not to trigger
Max. DC Gate Current not to trigger
0.2
0.1
Switching
Parameters
t
gt
t
rr
t
q
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
10TTS08
0.8
3
100
Units
µs
T
J
= 25°C
T
J
= 125°C
Conditions
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Junction Temperature Range
Max. Storage Temperature Range
to Case
R
thJA
Max. Thermal Resistance Junction
to Ambient
R
thCS
Typ. Thermal Resistance Case
to Heatsink
wt
T
Approximate Weight
Mounting Torque
Min.
Max.
Case Style
0.5
2 (0.07)
6 (5)
12 (10)
g (oz.)
Kg-cm
(Ibf-in)
Mountingsurface,smoothandgreased
62
10TTS08
- 40 to 125
- 40 to 125
1.5
Units
°C
Conditions
R
thJC
Max. Thermal Resistance Junction
°C/W
DCoperation
TO-220AC
3
10TTS08
SAFE
IR
Series
Preliminary Data Sheet I2143 11/97
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
125
10TTS08
R
thJC
(DC) = 1.5 K/W
120
Conduction Angle
125
10TTS08
R
thJC
(DC) = 1.5 K/W
120
Conduction Period
115
30°
60°
110
90°
120°
180°
105
0
1
2
3
4
5
6
7
Average On-state Current (A)
115
30°
60°
110
90°
120°
180°
105
0
2
4
6
8
10
12
Average On-state Current (A)
DC
Fig. 1 - Current Rating Characteristics
Maximum Average On-state Power Loss (W)
Fig. 2 - Current Rating Characteristics
Maximum Average On-state Power Loss (W)
12
10
8
6
RMS Limit
4
2
0
0
2
4
6
8
10
12
Average On-state Current (A)
Conduction Period
8
7
6
5
4
3
Conduction Angle
180°
120°
90°
60°
30°
RMS Limit
DC
180°
120°
90°
60°
30°
2
1
0
0
1
2
3
4
5
6
7
Average On-state Current (A)
10TTS08
T
J
= 125°C
10TTS08
T
J
= 125°C
Fig. 3 - On-state Power Loss Characteristics
Peak Half Sine Wave On-state Current (A)
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Fig. 4 - On-state Power Loss Characteristics
Peak Half Sine Wave On-state Current (A)
150
140
130
120
110
100
90
80
70
60
50
0.01
10TTS08
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T
J
= 125°C
No Voltage Reapplied
Rated V
RRM
Reapplied
130
120
110
100
90
80
70
60
1
Initial T
J
= 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
10TTS08
10
100
0.1
Pulse Train Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Puls es (N)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - Maximum Non-Repetitive Surge Current
4
10TTS08
SAFE
IR
Series
Preliminary Data Sheet I2143 11/97
1000
Instantaneous On-state Current (A)
10TTS08
100
10
T
J
= 25°C
T
J
= 125°C
1
0.5
1
1.5
2
2.5
3
3.5
Instantaneous On-stat e Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
Transient Thermal Impedance Z
thJC
(°C/W)
10
Steady State Value
(DC Operation)
1
D
D
D
D
= 0.50
= 0.33
= 0.25
= 0.17
0.1
D = 0.08
Single Pulse
10TTS08
0.01
0.0001
0.001
0. 01
Square Wave Pulse Duration (s)
0.1
1
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
5
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