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RGP10G

Description
1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL
Categorysemiconductor    Discrete semiconductor   
File Size58KB,2 Pages
ManufacturerGE Sensing ( Amphenol Advanced Sensors )
Websitehttp://www.vishay.com/
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RGP10G Overview

1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL

RGP10G Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
stateDISCONTINUED
packaging shaperound
Package SizeLONG FORM
Terminal formWire
Terminal locationAXIAL
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typeSignal diode
Maximum reverse recovery time0.1500 us
Maximum repetitive peak reverse voltage400 V
Maximum average forward current1 A
RGP10A THRU RGP10M
GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER
Reverse Voltage -
50 to 1000 Volts
*
D
DO-204AL
Forward Current -
1.0 Ampere
FEATURES
P
A
T
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
NOTE:
Lead diameter is
0.026 (0.66)
0.023 (0.58)
for suffix "E" part numbers
Plastic package has
Underwriters Laboratory
Flammability Classification 94V-0
High temperature metallurgically
bonded construction
Glass passivated cavity-free junction
Capable of meeting environmental standards of
MIL-S-19500
For use in high frequency rectifier circuits
Fast switching for high efficiency
1.0 Ampere operation at T
A
=55°C with no thermal
runaway
Typical I
R
less than 0.1µA
High temperature soldering guaranteed:
350°C/10 seconds 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
E
N
T
E
Dimensions in inches and (millimeters)
*
Glass-plastic encapsulation technique is covered by
Patent No. 3,996,602 and brazed-lead assembly by Patent No. 3,930,306
®
MECHANICAL DATA
Case:
JEDEC DO-204AL molded plastic over glass body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.012 ounce, 0.3 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
RGP
10A
RGP
10B
RGP
10D
RGP
10G
RGP
10J
RGP
10K
RGP
10M
UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length at T
A
=55°C
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum full load reverse current, full cycle average
0.375" (9.5mm) lead length T
A
=55°C
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance
(NOTE 2)
Typical thermal resistance
(NOTE 3)
Operating junction and storage temperature range
T
A
=25°C
T
A
=150°C
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
I
R
t
rr
C
J
R
ΘJA
T
J
, T
STG
50
35
50
100
70
100
200
140
200
400
280
400
1.0
30.0
1.3
100.0
5.0
200.0
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amp
Amps
Volts
µA
µA
150
15.0
55.0
-65 to +175
250
500
ns
pF
°C/W
°C
NOTES:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, P.C.B. mounted
4/98

RGP10G Related Products

RGP10G RGP10M RGP10K RGP10J RGP10D RGP10B RGP10A
Description 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, SILICON, SIGNAL DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41 1 A, SILICON, SIGNAL DIODE, DO-41 1 A, SILICON, SIGNAL DIODE

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