MSB1218A- RT1G
-
PNP Silicon General
Purpose Amplifier
Transistor
This PNP Silicon Epitaxial Planar Transistor is designed for general
purpose amplifier applications. This device is housed in the
SC-
-70/SOT-
-323 package which is designed for low power surface
mount applications.
Features
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COLLECTOR
3
High h
FE
, 210 -- 460
Low V
CE(sat)
, < 0.5 V
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
A
= 25C)
Rating
Collector--Base Voltage
Collector--Emitter Voltage
Emitter--Base Voltage
Collector Current -- Continuous
Collector Current -- Peak
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
C
I
C(P)
Value
45
45
7.0
100
200
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
1
BASE
2
EMITTER
3
1
2
SC-
-70 (SOT-
-323)
CASE 419
STYLE 4
THERMAL CHARACTERISTICS
Rating
Power Dissipation (Note 1)
Junction Temperature
Storage Temperature Range
Symbol
P
D
T
J
T
stg
Max
150
150
-- 55 to +150
Unit
mW
C
C
MARKING DIAGRAM
ELECTRICAL CHARACTERISTICS
Characteristic
Collector--Emitter Breakdown Voltage
(I
C
= 2.0 mAdc, I
B
= 0)
Collector--Base Breakdown Voltage
(I
C
= 10
mAdc,
I
E
= 0)
Emitter--Base Breakdown Voltage
(I
E
= 10
mAdc,
I
E
= 0)
Collector--Base Cutoff Current
(V
CB
= 20 Vdc, I
E
= 0)
Collector--Emitter Cutoff Current
(V
CE
= 10 Vdc, I
B
= 0)
DC Current Gain (Note 2)
(V
CE
= 10 Vdc, I
C
= 2.0 mAdc)
Collector--Emitter Saturation Voltage
(Note 2) (I
C
= 100 mAdc, I
B
= 10 mAdc)
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
h
FE1
V
CE(sat)
Min
45
45
7.0
--
--
210
--
Max
--
--
--
0.1
100
340
0.5
Unit
Vdc
Vdc
Vdc
mA
mA
--
Vdc
1
BR M
G
G
BR = Device Code
M
= Date Code*
G
= Pb--Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
MSB1218A--RT1G
Package
SC--70
(Pb--Free)
Shipping
†
3000 /Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR--4 glass epoxy printed circuit board using the
minimum recommended footprint.
2. Pulse Test: Pulse Width
300
ms,
D.C.
2%.
Semiconductor Components Industries, LLC, 2010
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
October, 2010 - Rev. 7
-
1
Publication Order Number:
MSB1218A-
-RT1/D
MSB1218A-
-RT1G
250
PD , POWER DISSIPATION (MILLIWATTS)
T
A
= 25C
IC, COLLECTOR CURRENT (mA)
200
150
100
50
0
-- 50
R
θJA
= 833C/W
120
90
60
30
0
300
mA
250
200
150
100
I
B
= 50
mA
0
3
6
9
12
15
0
50
100
150
T
A
, AMBIENT TEMPERATURE (C)
V
CE
, COLLECTOR VOLTAGE (V)
Figure 1. Derating Curve
1000
T
A
= 25C
V
CE
= 10 V
VCE , COLLECTOR-EMITTER VOLTAGE (V)
2
Figure 2. I
C
- V
CE
-
T
A
= 25C
1.5
T
A
= 75C
DC CURRENT GAIN
T
A
= -- 25C
100
1
0.5
10
0.1
1
10
100
0
0.01
0.1
1
I
B
, BASE CURRENT (mA)
10
100
I
C
, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
900
800
700
600
500
400
300
200
100
0
0.2
0.5
1
5
10
20
40
60
80
T
A
= 25C
V
CE
= 5 V
Cib, INPUT CAPACITANCE (pF)
COLLECTOR VOLTAGE (mV)
Figure 4. Collector Saturation Region
13
12
11
10
9
8
7
6
0
1
2
V
EB
(V)
3
4
100
150 200
I
C
, COLLECTOR CURRENT (mA)
Figure 5. On Voltage
Figure 6. Capacitance
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2
MSB1218A-
-RT1G
PACKAGE DIMENSIONS
SC-
-70 (SOT-
-323)
CASE 419--04
ISSUE N
D
e1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
A1
A2
b
c
D
E
e
e1
L
H
E
MIN
0.80
0.00
0.30
0.10
1.80
1.15
1.20
0.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.70 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.38
0.56
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.008
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.022
0.095
3
H
E
1
2
E
b
e
A
0.05 (0.002)
A1
A2
L
c
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm
inches
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent
rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.
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4
MSB1218A-
-RT1/D