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MSB1218A-RT1G

Description
PNP Bipolar Transistor, SC-70 (SOT-323) 3 LEAD, 3000-REEL
CategoryDiscrete semiconductor    The transistor   
File Size114KB,4 Pages
ManufacturerBel Fuse
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MSB1218A-RT1G Overview

PNP Bipolar Transistor, SC-70 (SOT-323) 3 LEAD, 3000-REEL

MSB1218A-RT1G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerBel Fuse
Parts packaging codeSC-70
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Manufacturer packaging code419-04
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
Is SamacsysN
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)210
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1
MSB1218A- RT1G
-
PNP Silicon General
Purpose Amplifier
Transistor
This PNP Silicon Epitaxial Planar Transistor is designed for general
purpose amplifier applications. This device is housed in the
SC-
-70/SOT-
-323 package which is designed for low power surface
mount applications.
Features
http://onsemi.com
COLLECTOR
3
High h
FE
, 210 -- 460
Low V
CE(sat)
, < 0.5 V
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
A
= 25C)
Rating
Collector--Base Voltage
Collector--Emitter Voltage
Emitter--Base Voltage
Collector Current -- Continuous
Collector Current -- Peak
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
C
I
C(P)
Value
45
45
7.0
100
200
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
1
BASE
2
EMITTER
3
1
2
SC-
-70 (SOT-
-323)
CASE 419
STYLE 4
THERMAL CHARACTERISTICS
Rating
Power Dissipation (Note 1)
Junction Temperature
Storage Temperature Range
Symbol
P
D
T
J
T
stg
Max
150
150
-- 55 to +150
Unit
mW
C
C
MARKING DIAGRAM
ELECTRICAL CHARACTERISTICS
Characteristic
Collector--Emitter Breakdown Voltage
(I
C
= 2.0 mAdc, I
B
= 0)
Collector--Base Breakdown Voltage
(I
C
= 10
mAdc,
I
E
= 0)
Emitter--Base Breakdown Voltage
(I
E
= 10
mAdc,
I
E
= 0)
Collector--Base Cutoff Current
(V
CB
= 20 Vdc, I
E
= 0)
Collector--Emitter Cutoff Current
(V
CE
= 10 Vdc, I
B
= 0)
DC Current Gain (Note 2)
(V
CE
= 10 Vdc, I
C
= 2.0 mAdc)
Collector--Emitter Saturation Voltage
(Note 2) (I
C
= 100 mAdc, I
B
= 10 mAdc)
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
h
FE1
V
CE(sat)
Min
45
45
7.0
--
--
210
--
Max
--
--
--
0.1
100
340
0.5
Unit
Vdc
Vdc
Vdc
mA
mA
--
Vdc
1
BR M
G
G
BR = Device Code
M
= Date Code*
G
= Pb--Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
MSB1218A--RT1G
Package
SC--70
(Pb--Free)
Shipping
3000 /Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR--4 glass epoxy printed circuit board using the
minimum recommended footprint.
2. Pulse Test: Pulse Width
300
ms,
D.C.
2%.
Semiconductor Components Industries, LLC, 2010
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
October, 2010 - Rev. 7
-
1
Publication Order Number:
MSB1218A-
-RT1/D

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